Silicon Bridge Rectifiers
TB2S-G Thru. TB10S-G
Reverse Voltage: 200 to 1000 Volts
Forward Current: 0.8,1.0 A
RoHS Device
Features
-Glass passivated chip junction.
-High surge overload rating :30A peak
-Save space on printed circuit boards.
-High temperature soldering guaranteed:
260°C/10 seconds at 5 ibs.
-Pb free product.
-Plastic materrial has U/L flammability classification 94v-0.
0.161 (4.10)
0.154 (3.90)
0.179 (4.55)
0.167 (4.25)
0.028 (0.70)
0.024 (0.60)
TBS
-
+
0.012 (0.30)
0.008 (0.20)
0.264 (6.70)
0.249 (6.30)
Mechanical data
-Polarity: Symbol molded on body.
-Case: Molded plastic body over passivated junction.
-Terminals: Plated leads solderable per MIL-STD-750,
Method 2026.
-Mounting position: Any.
0.060 (1.45)
0.051 (1.15)
0.205 (5.20)
0.189 (4.80)
0.006 (0.15)
0.002 (0.05)
0.028 (0.70)
0.024 (0.60)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Parameter
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current
TL=100°C
Peak Forward Surge Current, 8.3ms Single
Half Sine-wave, Superimposed on Rated Load
(JEDEC Method)
Maximum Instantaneous Forward Voltage
at 0.4A DC
Maximum Reverse Current @T
A
=25°C
at Rated DC Blocking Voltage
Typical Thermal Junction to lead
On aluminum substrate
On glass-epoxy substrate
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. On glass epoxy P.C.B
2. On aluminum substrate
V
RRM
V
RMS
V
DC
I
F(AV)
TB2S-G
TB2S
200
140
200
TB4S-G
TB4S
400
280
400
TB6S-G
TB6S
600
420
600
0.8
1)
2)
1.0
30
TB8S-G
TB8S
800
560
800
TB10S-G
Unit
TB10S
1000
700
1000
V
V
V
A
I
FSM
A
V
F
0.95
V
μA
I
R
R
θJL
R
θJA
T
J
T
STG
10
25
62.5
80
-55 to +150
-55 to +150
°C/W
°C
°C
REV:A
QW-BBR53
Page 1
Comchip Technology CO., LTD.
Silicon Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES (TB2S-G thru TB10S-G)
Fig.1 - Typical Forward Characteristics
Average Forward Rectified Current, (A)
1.0
1.0
Fig.2 - Forward Derating Curve
Instantaneous Forward Current, (A)
Aluminum Substrate
0.4
0.75
Glass
Epoxy
P.C.B
0.1
0.5
0.25
Resistive or Inductive Load
0.01
0.7
0
0
25
50
75
100
125
150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Instantaneous Forward Voltage, (V)
Ambient temperature, (°C)
Fig.3 - Typical Reverse Characteristics
10000
40
Fig.4 - Peak Forward Surge Current
Instantaneous Reverse Current, (µA)
10000
Peak Forward Surge Current, (A)
30
1000
T
A
=100
O
C
20
100
10
Pulse width 8.3mS,
single half-sine wave
(JEDEC Method)
10
T
A
=25
O
C
1.0
0
20
40
60
80
100
120
140
0
1
10
100
Percent of Rated Peak Reverse Voltage, (%)
Number of Cycles at 60Hz
REV:A
QW-BBR53
Page 2
Comchip Technology CO., LTD.
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