VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
FEATURES
Base
cathode
2
2
3
1
1
Cathode
3
Anode
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified
JEDEC
®
-JESD 47
according
to
TO-247AC modified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-247AC modified (2 pins)
60 A
800 V to 1200 V
1.09 V
1000 A
150 °C
Single die
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
60 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
60
800/1200
1000
1.09
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-60EPS08PbF, VS-60EPS08-M3
VS-60EPS12PbF, VS-60EPS12-M3
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
800
1200
900
1300
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 118 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
t = 0.1 ms to 10 ms, no
voltage
reapplied
VALUES
60
840
1000
3530
4220
42 200
A
2
s
A
2
s
A
UNITS
Revision: 12-Feb-16
Document Number: 94345
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
30 A, T
J
= 25 °C
60 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.0
1.09
3.96
0.74
0.1
1.0
UNITS
V
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
unction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
60EPS08
60EPS12
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 12-Feb-16
Document Number: 94345
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
110
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
VS-60EPS..
Series
R
thJC
(DC) = 0.35 K/W
140
Ø
100
90
80
70
60
50
40
30
20
10
0
0
130
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
120
60°
110
30°
100
0
10
20
30
40
50
60
70
90°
120°
180°
Ø
Conduction period
VS-60EPS..
Series
T
J
= 150 °C
20
40
60
80
100
94345_01
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
94345_04
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
900
VS-60EPS..
Series
R
thJC
(DC) = 0.35 K/W
800
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
Ø
Peak Half Sine Wave
Forward Current (A)
700
600
500
400
300
Conduction period
130
DC
30°
120
60°
180°
90°
120°
110
0
20
40
60
80
100
VS-60EPS..
Series
200
1
94345_05
10
100
94345_02
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
90
1100
1000
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated
V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
80
Peak Half Sine Wave
Forward Current (A)
70
60
50
40
30
20
10
0
0
900
800
700
600
500
400
300
200
RMS limit
Ø
Conduction angle
VS-60EPS..
Series
T
J
= 150 °C
10
20
30
40
50
60
70
VS-60EPS..
Series
0.1
1.0
10
100
0.01
94345_06
94345_03
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Feb-16
Document Number: 94345
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
T
J
= 25 °C
10
T
J
= 150 °C
VS-60EPS..
Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
94345_07
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
VS-60EPS..
Series
0.01
0.0001
94345_08
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Feb-16
Document Number: 94345
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
-
-
-
-
-
60
2
E
3
P
4
S
5
12
6
PbF
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = single diode
Package:
P = TO-247AC modified
Type of silicon:
S = standard recovery rectifier
08 = 800 V
12 = 1200 V
6
7
-
-
Voltage code x 100 = V
RRM
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60EPS08PbF
VS-60EPS08-M3
VS-60EPS12PbF
VS-60EPS12-M3
QUANTITY PER T/R
25
25
25
25
MINIMUM ORDER QUANTITY
500
500
500
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC modified PbF
TO-247AC modified -M3
www.vishay.com/doc?95541
www.vishay.com/doc?95255
www.vishay.com/doc?95442
www.vishay.com/doc?95625
Revision: 12-Feb-16
Document Number: 94345
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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