MBRF1090, MBRF10100
www.vishay.com
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
FEATURES
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capabilty
• High frequency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
2
ITO-220AC
MBRF1090
MBRF10100
PIN 1
1
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PIN 2
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variation
10 A
90 V, 100 V
150 A
0.65 V
150 °C
ITO-220AC
Single die
MECHANICAL DATA
Case:
ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rating of change (rated V
R
)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
dV/dt
V
AC
T
J
, T
STG
MBRF1090
90
90
90
10
150
10 000
1500
-65 to +150
MBRF10100
100
100
100
UNIT
V
V
V
A
A
V/μs
V
°C
Revision: 28-Oct-13
Document Number: 89320
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF1090, MBRF10100
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current
at working peak reverse voltage
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
TEST CONDITIONS
I
F
= 10 A
I
F
= 20 A
T
C
= 25 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
V
F
(1)
SYMBOL
VALUE
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
I
R (2)
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
MBRF
3.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
ITO-220AC
PREFERRED P/N
MBRF10100-M3/4W
UNIT WEIGHT (g)
1.384
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
10
Resistive or Inductive Load
160
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
140
Average Forward Current (A)
8
120
6
100
4
80
2
60
0
0
50
100
150
40
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetititve Peak Forward Surge Current
Revision: 28-Oct-13
Document Number: 89320
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF1090, MBRF10100
www.vishay.com
Vishay General Semiconductor
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
100
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
Junction Capacitance (pF)
T
J
= 150 °C
100
0.1
T
J
= 25 °C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
10
Junction to Case
10
T
J
= 125 °C
1
1
0.1
0.1
0.01
0.01
T
J
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
0.001
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.671 (17.04)
0.651 (16.54)
PIN
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
2
0.191 (4.85)
0.171 (4.35)
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Revision: 28-Oct-13
Document Number: 89320
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000