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BYM36A-TAP

产品描述Rectifiers 200 Volt 3.0 Amp 65 Amp IFSM
产品类别分立半导体    二极管   
文件大小116KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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BYM36A-TAP概述

Rectifiers 200 Volt 3.0 Amp 65 Amp IFSM

BYM36A-TAP规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time11 weeks
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.6 V
JESD-30 代码E-LALF-W2
JESD-609代码e2
湿度敏感等级1
最大非重复峰值正向电流65 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
峰值回流温度(摄氏度)260
最大重复峰值反向电压200 V
最大反向电流5 µA
最大反向恢复时间0.1 µs
表面贴装NO
技术AVALANCHE
端子面层Tin/Silver (Sn/Ag)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间30
Base Number Matches1

文档预览

下载PDF文档
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
949588
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
ORDERING INFORMATION
(Example)
DEVICE NAME
BYM36E
BYM36E
ORDERING CODE
BYM36E-TR
BYM36E-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 3 A
V
R
= 400 V; I
F(AV)
= 3 A
V
R
= 600 V; I
F(AV)
= 3 A
V
R
= 800 V; I
F(AV)
= 2.9 A
V
R
= 1000 V; I
F(AV)
= 2.9 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
I
(BR)R
= 1 A, inductive load
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
I
F(AV)
I
F(AV)
I
F(AV)
E
R
T
j
= T
stg
VALUE
200
400
600
800
1000
65
3
3
3
2.9
2.9
20
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
A
A
A
mJ
°C
Reverse voltage
= repetitive peak reverse voltage
See electrical characteristics
Peak forward surge current
t
p
= 10 ms, half sine wave
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.8, 03-Sep-12
Document Number: 86012
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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