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MBRS140LT3

产品描述Schottky Diodes u0026 Rectifiers 1A 40V Low Vf
产品类别分立半导体    二极管   
文件大小61KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MBRS140LT3概述

Schottky Diodes u0026 Rectifiers 1A 40V Low Vf

MBRS140LT3规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
厂商名称ON Semiconductor(安森美)
包装说明R-PDSO-J2
针数2
制造商包装代码403A-03
Reach Compliance Codenot_compliant
ECCN代码EAR99
Samacsys DescriptionSchottky Diodes & Rectifiers 1A 40V Low Vf
其他特性FREE WHEELING DIODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.6 V
JESD-30 代码R-PDSO-J2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值正向电流40 A
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)235
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子面层Tin/Lead (Sn/Pb)
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

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MBRS140LT3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE − 40 VOLTS
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Low Forward Voltage Drop
Pb−Free Package is Available
SMB
CASE 403A
PLASTIC
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 110°C)
Peak Repetitive Forward Current (At Rated
V
R
, Square Wave, 100 kHz, T
C
= 110°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
Value
40
Unit
V
MARKING DIAGRAM
AYWW
B14LG
G
1.0
2.0
40
A
A
A
B14L
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
−55 to +150
−55 to +125
10,000
°C
°C
V/ms
Device
MBRS140LT3
MBRS140LT3G
Package
SMB
SMB
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
T
stg
, T
C
T
J
dv/dt
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
1
October, 2007 − Rev. 3
Publication Order Number:
MBRS140LT3/D
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