Freescale Semiconductor
Technical Data
Document Number: MRF9180
Rev. 10, 5/2006
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1400 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power -
750 kHz:
-45.0 dBc in 30 kHz BW
1.98 MHz:
-60.0 dBc in 30 kHz BW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF9180R6
880 MHz, 170 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
CASE 375D-05, STYLE 1
NI-1230
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
-0.5, +65
-0.5, +15
388
2.22
-65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.45
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
MRF9180R6
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.9
3.7
0.19
6
4
—
0.5
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1,3)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system)
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
C
oss
C
rss
—
—
77
3.8
—
—
pF
pF
G
ps
16
17.5
—
dB
η
35
39
—
%
IMD
—
-31
-28
dBc
IRL
—
-15
-9
dB
G
ps
—
17.5
—
dB
η
—
38.5
—
%
IMD
—
-31
—
dBc
IRL
—
-13
—
dB
MRF9180R6
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate Quiescent Voltage
(2)
(V
DS
= 26 Vdc, I
D
= 1400 mAdc)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system)
(continued)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
1. Measurement made with device in push-pull configuration.
P
1dB
—
170
—
W
Symbol
Min
Typ
Max
Unit
G
ps
—
16.5
—
dB
η
—
55
—
%
ARCHIVE INFORMATION
MRF9180R6
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
GG
+
C13
B2
B4
C14
C16
C22
B6
+
C26
L3
+
C27
+
C28
V
DD
Z18
R1
COAX 1
C10
RF
INPUT Z1
Z6
Z2
L1
Z3
Z4
Z7
Z5
C2
C3
C4
Z9
Z11
C5
Z13
Z8
Z10
C6
Z12
C7
C8
Z15
DUT
Z17
C9
Z14
Z16
Z20
Z22
C20
C17
Z24
COAX 3
C18
L4
Z26
Z28
Z29
RF
OUTPUT
ARCHIVE INFORMATION
Z27
R2
COAX 2
COAX 4
B1
+
C11
B3
C12
Z19
Z21
C15
Z23
C19
L2
B5
+
C21
C23
+
C24
+
Z25
C29
V
GG
V
DD
C25
B1, B2, B5, B6
B3, B4
C1
C2, C3, C5, C6, C12, C14,
C19, C20, C21, C22
C4, C9, C10, C15, C16
C7
C8
C11, C13
C17
C18
C23, C24, C26, C27
C25, C28
C29
Coax1, Coax2
Coax3, Coax4
L1, L2, L3
L4
R1, R2
Long Ferrite Beads, Surface Mount
Short Ferrite Beads, Surface Mount
0.6-4.5 pF Variable Capacitor
47 pF Chip Capacitors
12 pF Chip Capacitors
0.8-9.1 pF Variable Capacitor
7.5 pF Chip Capacitor
10
μF,
35 V Tantalum Surface Mount Chip Capacitors
3.6 pF Chip Capacitor
5.1 pF Chip Capacitor
22
μF,
35 V Tantalum Surface Mount Chip Capacitors
220
μF,
50 V Electrolytic Capacitors
0.4-2.5 pF Variable Capacitor
25
Ω,
Semi Rigid Coax, 70 mil OD, 1.05″ Long
50
Ω,
Semi Rigid Coax, 85 mil OD, 1.05″ Long
18.5 nH Mini Spring Inductors, Coilcraft
12.5 nH Mini Spring Inductor, Coilcraft
510
Ω,
1/10 W Chip Resistors
Z1
Z2
Z3
Z4, Z5, Z26, Z27
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z28
Z29
Board
Material
0.420″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.097″ x 0.080″ Microstrip
2.170″ x 0.080″ Microstrip
0.075″ x 0.080″ Microstrip
0.088″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.460″ x 0.220″ Microstrip
0.685″ x 0.625″ Microstrip
0.055″ x 0.625″ Microstrip
0.055″ x 0.632″ Microstrip
0.685″ x 0.632″ Microstrip
0.732″ x 0.080″ Microstrip
0.060″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.460″ x 0.080″ Microstrip
30 mil Teflon
®
,
εr
= 2.55,
Copper Clad, 2 oz Cu
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9180R6
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C1
C13
V
GG
B2
B4
MRF9180
900MHz
PUSH PULL
Rev 01
B6
C26 C27
C28
V
DD
C14
R1
L1
C3
C4
CUT OUT AREA
C6
C5
C7
R2
C12
Resistor
Resistor
C22
C10
C16
L3
L4
C8
C17
C18
C20
C19
C29
C1
C2
ARCHIVE INFORMATION
C9
C15
C21
C11
V
GG
B1
B3
B5
C25
C23 C24
V
DD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signa‐
ture/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 880 MHz Broadband Test Circuit Component Layout
MRF9180R6
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
L2
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