IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT136S-600
4Q Triac
11 October 2016
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package
intended for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
-
-
-
-
Typ
-
-
-
-
-
5
8
11
30
Max
600
4
25
27
125
35
35
35
70
Unit
V
A
A
A
°C
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT136S-600
4Q Triac
Symbol
I
H
V
T
dV
D
/dt
Parameter
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
Conditions
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 4 A; gate open circuit
Min
-
-
100
Typ
5
1.4
250
Max
15
1.7
-
Unit
mA
V
V/µs
Dynamic characteristics
dV
com
/dt
-
50
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
1
2
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information
Type number
BT136S-600
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
2 / 13
WeEn Semiconductors
BT136S-600
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
4
25
27
3.1
50
50
10
50
2
5
0.5
150
125
003aae830
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 70 mA
I
G
= 140 mA
I
G
= 70 mA
-
-
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
5
I
T(RMS)
(A)
4
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aae828
over any 20 ms period
-
-40
-
12
I
T(RMS)
(A)
10
8
3
6
2
4
1
2
0
10
-2
0
- 50
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
T
mb
≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
3 / 13
WeEn Semiconductors
BT136S-600
4Q Triac
8
P
tot
(W)
6
003aae827
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
101
T
mb(max)
(°C)
α
α = 180°
α
120°
90°
60°
30°
107
4
113
2
119
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
25
30
003aae831
20
15
10
5
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
11 October 2016
4 / 13
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