The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
18
1
Maximum
23
1.3
Unit
New Product
Si7738DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 7.7 A
V
DS
= 15 V, I
D
= 7.7 A
Min.
150
Typ.
Max.
Unit
V
200
- 10
2
4
± 100
1
10
30
0.031
22
2100
0.038
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 75 V, V
GS
= 0 V, f = 1 MHz
160
45
35
53
pF
V
DS
= 75 V, V
GS
= 10 V, I
D
= 7.7 A
f = 1 MHz
V
DD
= 75 V, R
L
= 12
Ω
I
D
≅
6.2 A, V
GEN
= 10 V, R
g
= 1
Ω
8
9
1.6
15
10
25
10
25
15
40
15
30
30
0.8
75
245
58
17
1.2
115
370
nC
Ω
ns
T
C
= 25 °C
I
S
= 6.2 A, V
GS
=
0 V
A
V
ns
nC
ns
I
F
= 6.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
New Product
Si7738DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
10
V
GS
= 10
V
thru 6
V
48
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
36
6
T
C
= 125 °C
4
T
C
= 25 °C
2
T
C
= - 55 °C
0
24
12
V
GS
= 5
V
V
GS
= 4
V
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.040
2500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
0.036
V
GS
= 10
V
C - Capacitance (pF)
2000
0.032
1500
0.028
1000
0.024
500
C
oss
C
rss
0.020
0
5
10
15
20
25
30
0
0
20
40
60
80
100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 7.7 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 75
V
6
V
DS
= 120
V
4
2.0
2.4
I
D
= 7.7 A
Capacitance
V
GS
= 10
V
(Normalized)
1.6
1.2
2
0.8
0
0
5
10
15
20
25
30
35
0.4
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
www.vishay.com
3
New Product
Si7738DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
150
120
I
S
- Source Current (A)
T
J
= 150 °C
10
Power (W)
T
J
= 25 °C
0.8
1.0
90
60
30
1
0.0
0.2
0.4
0.6
0
0.01
0.1
1
Time (s)
10
100
1000
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
4.2
100
Single Pulse Power (Junction-to-Ambient)
3.8
3.4
V
GS(th)
(V)
I
Dav
(A)
125 °C
10
25 °C
3.0
2.6
I
D
= 250
µA
2.2
1.8
- 50
1
- 25
0
25
50
75
100
125
150
10
-4
10
-3
10
-2
t
av
(s)
10
-1
1
T
J
- Temperature (°C)
Threshold Voltage
0.10
I
D
= 7.7 A
R
DS(on)
- On-Resistance (Ω)
0.08
I
D
- Drain Current (A)
T
J
= 125 °C
Single Pulse Avalanche Current Capability vs. Time
100
Limited
by
R
DS(on)
*
100
µs
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
0.01
T
A
= 25 °C
Single Pulse
DC
0.06
0.04
T
J
= 25 °C
0.02
0.00
0
2
4
6
8
10
0.001
0.1
1
10
100
1000
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
New Product
Si7738DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
100
32
I
D
- Drain Current (A)
Package Limited
Power (W)
0
25
50
75
100
125
150
24
80
60
16
40
8
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
For healthcare professionals, accurate diagnosis and treatment are crucial for a clear picture of a person's health. However, healthcare professionals often rely on tests at medical facilities, cli...[详细]
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