NVMFS5830NL
Power MOSFET
Features
40 V, 2.3 mW, 185 A, Single N−Channel
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5830NLWF
−
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
40 V
R
DS(ON)
MAX
2.3 mW @ 10 V
3.6 mW @ 4.5 V
I
D
MAX
185 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3,
4)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±
20
185
131
158
79
29
20
3.8
1.9
1012
−55
to
+ 175
185
361
A
°C
A
mJ
1
Unit
V
V
A
G (4)
W
S (1,2,3)
A
N−CHANNEL MOSFET
D (5,6)
W
MARKING
DIAGRAM
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
XXXXXX
AYWZZ
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L(pk)
= 85 A, L
= 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Notes 2, 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
1.0
39
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 3
1
Publication Order Number:
NVMFS5830NL/D
NVMFS5830NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 60 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 10 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 32 V; I
D
= 60 A
V
GS
= 4.5 V, V
DS
= 32 V; I
D
= 60 A
V
GS
= 10 V, V
DS
= 32 V; I
D
= 60 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.74
0.58
41
19
19
33
nC
ns
1.0
V
22
32
40
27
ns
5880
750
500
58
113
5.5
19.5
32
3.6
V
nC
nC
nC
pF
I
D
= 20 A
I
D
= 20 A
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
32
1
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.4
7.2
1.7
2.6
38
2.4
V
mV/°C
2.3
3.6
mW
S
V
DS
= 5 V, I
D
= 10 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5830NL
TYPICAL CHARACTERISTICS
350
300
I
D
, DRAIN CURRENT (A)
250
200
150
100
50
0
T
J
= 25°C
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
350
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
V
GS
= 3.2 V
I
D
, DRAIN CURRENT (A)
300
250
200
150
100
50
0
2
T
J
= 25°C
T
J
= 125°C
3
V
DS
≥
10 V
10 V
5.5 V
4.4 V
T
J
=
−55°C
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.008
0.006
0.004
0.002
0.000
0
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0035
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
0.0030
0.0025
0.0020
V
GS
= 10 V
0.0015
0.0010
10
2
4
6
8
10
30
50
70
90
110
130
150
170
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1000
V
GS
= 10 V
I
D
= 20 A
I
DSS
, LEAKAGE (nA)
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10000
T
J
= 125°C
10
20
30
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS5830NL
TYPICAL CHARACTERISTICS
8000
7000
C, CAPACITANCE (pF)
6000
5000
4000
3000
2000
1000
0
0
C
rss
10
20
30
40
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
8
6
4
2
0
0
Q
gs
Q
gd
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
T
V
DS
= 32 A
I
D
= 60 A
T
J
= 25°C
10
20
30 40
50
60 70
80
90 100 110 120
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
175
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 20 V
I
D
= 10 A
V
GS
= 4.5 V
t, TIME (ns)
150
125
100
75
50
25
V
GS
= 0 V
T
J
= 25°C
100
t
d(off)
t
r
t
f
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
1
0.1
0.01
0.1
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
dc
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVMFS5830NL
TYPICAL CHARACTERISTICS
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.000001
PULSE TIME (sec)
Figure 12. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFS5830NLT1G
NVMFS5830NLWFT1G
NVMFS5830NLT3G
NVMFS5830NLWFT3G
Marking
V5830L
5830LW
V5830L
5830LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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