IRF6714MPbF
IRF6714MTRPbF
l
l
l
l
l
l
l
l
l
l
PD - 96130A
RoHs Compliant and Halogen Free
Low Profile (<0.6 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET
R
DS(on)
Q
gs2
4.1nC
V
DSS
Q
g
tot
V
GS
Q
gd
8.3nC
R
DS(on)
Q
oss
23nC
25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V
Q
rr
36nC
V
gs(th)
1.9V
29nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
5
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
25
±20
29
23
166
234
175
23
VGS, Gate-to-Source Voltage (V)
A
mJ
A
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
4
3
2
1
0
2
4
6
8
10
12
14
T J = 25°C
T J = 125°C
ID = 29A
ID= 23A
VDS= 20V
VDS= 13V
16
18
20
VGS, Gate -to -Source Voltage (V)
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.651mH, R
G
= 25Ω, I
AS
= 23A.
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1
04/29/09
IRF6714MPbF
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.4
–––
–––
–––
–––
–––
122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
18
1.6
2.6
1.9
-6.5
–––
–––
–––
–––
–––
29
9.0
4.1
8.3
8.1
12
23
1.2
18
26
13
9.6
3890
1110
490
–––
–––
2.1
3.4
2.4
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 29A
mΩ
V
GS
= 4.5V, I
D
= 23A
V
V
mV/°C
µA
nA
S
i
i
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 23A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 23A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
nC
ns
I
D
= 23A
R
G
= 1.8Ω, R
D
= 0.54Ω
See Fig. 17
V
GS
= 0V
Ãi
pF
V
DS
= 13V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
26
36
112
A
234
1.0
39
54
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
T
J
= 25°C, I
F
= 23A
di/dt = 200A/µs
Ãg
i
i
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%
2
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IRF6714MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
g
dg
eg
fg
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
Ã
W/°C
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
2
τ
3
τ
4
τ
4
τ
A
Thermal Response ( Z thJA )
10
1
Ri (°C/W)
1.3634
7.8361
19.8534
15.9581
τi
(sec)
0.000202
0.096325
1.3861
51
0.1
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6714MPbF
1000
TOP
VGS
10.0V
5.00V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
1000
TOP
VGS
10.0V
5.00V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
2.75V
10
2.75V
0.1
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
2.0
ID = 29A
ID, Drain-to-Source Current (A)
1.5
V GS = 10V
V GS = 4.5V
1.0
10
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
20
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
T J = 25°C
10000
Ciss
Coss
1000
Crss
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
16
C, Capacitance(pF)
12
8
4
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
50
100
150
200
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6714MPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ISD, Reverse Drain Current (A)
100
T J = 150°C
T J = 25°C
T J = -40°C
ID, Drain-to-Source Current (A)
100
10
1msec
10
1
DC
10msec
1
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
T A = 25°C
T J = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
3.5
3.0
2.5
2.0
ID = 100µA
1.5
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 1.0mA
ID = 1.0A
ID = 250µA
180
160
140
ID, Drain Current (A)
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
800
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
2.43A
3.22A
BOTTOM 23.0A
EAS , Single Pulse Avalanche Energy (mJ)
700
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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