d. Maximum under steady state conditions is 81 °C/W
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-1454-Rev. B, 18-Sep-17
Document Number: 62965
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS822DNT
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 6.3 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 6.3 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 15 V, R
L
= 2.4
I
D
6.3 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 2.4
I
D
6.3 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7.8 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.8 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.8 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 7.8 A
MIN.
30
-
-
1
-
-
-
20
-
-
-
-
-
-
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
35
-4.5
-
-
-
-
-
0.020
0.024
17
435
95
42
8
3.8
1.4
1.1
3.2
15
12
13
10
5
10
15
10
-
-
0.8
15
7
9
6
MAX.
-
-
-
2.5
± 100
1
5
-
0.024
0.030
-
-
-
-
12
6
-
-
4.5
25
20
20
15
10
15
25
15
4.2
30
1.2
25
12
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1454-Rev. B, 18-Sep-17
Document Number: 62965
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS822DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 thru 4 V
8
10
Vishay Siliconix
25
I
D
- Drain Current (A)
20
I
D
- Drain Current (A)
6
15
V
GS
= 3 V
10
4
T
C
= 25 °C
2
T
C
= 125 °C
0
T
C
= -55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.035
600
R
DS(on)
- On-Resistance (Ω)
0.030
C - Capacitance (pF)
500
C
iss
400
0.025
V
GS
= 4.5 V
300
0.020
V
GS
= 10 V
200
C
oss
100
C
rss
0.015
0.010
0
5
10
15
20
25
30
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 7.8 A
V
GS
- Gate-to-Source Voltage (V)
1.8
I
D
= 7.8 A
1.6
V
GS
= 10 V
1.4
V
GS
= 4.5 V
8
6
V
DS
= 15 V
4
V
DS
= 24 V
1.2
1.0
2
0.8
0
0
2
4
6
8
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-1454-Rev. B, 18-Sep-17
Document Number: 62965
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS822DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 7.8 A
R
DS(on)
- On-Resistance (Ω)
0.06
Vishay Siliconix
I
S
- Source Current (A)
10
T
J
= 25 °C
T
J
= 150 °C
0.04
T
J
= 125 °C
0.02
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.9
1.8
1.7
1.6
I
D
= 250 µA
Power (W)
-50
-25
0
25
50
75
100
125
150
50
40
V
GS(th)
(V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
T
J
- Temperature (°C)
30
20
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power
100
Limited by R
DS(on)
(1)
10
Limited by I
DM
I
D
- Drain Current (A)
100 µs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
1s
10 s
DC
Safe Operating Area, Junction-to-Ambient
S17-1454-Rev. B, 18-Sep-17
Document Number: 62965
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS822DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
Vishay Siliconix
16
20
12
I
D
- Drain Current (A)
15
Package limited
10
Power (W)
75
100
125
150
8
4
5
0
0
25
50
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1454-Rev. B, 18-Sep-17
Document Number: 62965
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
