MIXA81H1200EH
IGBT Module
H Bridge
V
CES
= 1200 V
I
C25
= 120 A
V
CE(sat)
= 1.8 V
Part name
(Marking on product)
MIXA81H1200EH
13, 21
1
2
9
10
19
E72873
15
3
4
14, 20
11
12
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Optimizes pin layout
IXYS reserves the right to change limits, test conditions and dimensions.
20110518a
© 2011 IXYS All rights reserved
1-6
MIXA81H1200EH
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 77 A; V
GE
= 15 V
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 75 A
inductive load
V
CE
= 600 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 10
W
V
GE
= ±15 V; R
G
= 10
W;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
120
84
390
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
1.8
2.1
5.4
6.0
0.03
0.6
230
70
40
250
100
6.8
8.3
2.1
6.5
0.2
500
T
VJ
= 125°C
V
CEK
= 1200 V
T
VJ
= 125°C
225
10
300
0.32
A
µs
A
K/W
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 10
W;
non-repetitive
(per IGBT)
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 100 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -1600 A/µs
I
F
= 100 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
135
90
Unit
V
A
A
V
V
µC
A
ns
mJ
1.95
1.95
12.5
100
350
4
2.2
0.4
T
C
= 25°C unless otherwise stated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20110518a
© 2011 IXYS All rights reserved
2-6
MIXA81H1200EH
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
d
S
d
A
R
pin-chip
R
thCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
3000
200
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
3
10
7.5
2.5
with heatsink compound
0.02
300
6
mW
K/W
g
Equivalent Circuits for Simulation
I
V
0
R
0
Symbol
V
0
R
0
V
0
R
0
Definitions
IGBT
free wheeling diode
Conditions
T1 - T6
D1 - D6
min.
T
VJ
= 150°C
T
VJ
= 150°C
Ratings
typ. max.
1.1
17.9
1.09
9.1
Unit
V
mW
V
mW
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20110518a
© 2011 IXYS All rights reserved
3-6
MIXA81H1200EH
Circuit Diagram
13, 21
2D Data Matrix
FOSS-ID 6 digits
9
10
19
15
1
2
XXX XX-XXXXX
YYCWx
Logo
Part name
Date Code
Prod.Index
Part number
M
I
X
A
81
H
1200
EH
= Module
= IGBT
= XPT
= standard
= Current Rating [A]
= H~ Bridge
= Reverse Voltage [V]
= E3-Pack
3
4
14, 20
11
12
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
Product Marking
Ordering
Standard
Part Name
MIXA 81 H 1200 EH
Marking on Product
MIXA81H1200EH
Delivering Mode Base Qty Ordering Code
Box
5
511053
20110518a
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
4-6
MIXA81H1200EH
Transistor T1 - T6
140
120
100
V
GE
= 15 V
140
120
100
T
VJ
= 25°C
T
VJ
= 125°C
V
GE
= 15 V
17 V
19 V
13 V
11 V
I
C
[A]
80
60
40
20
0
0.0
I
C
[A]
80
60
40
20
0
0.0
T
VJ
= 125°C
9V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
CE
[V]
Fig. 1 Typ. output characteristics
20
140
120
100
V
CE
[V]
Fig. 2 Typ. output characteristics
I
C
= 75 A
V
CE
= 600 V
15
I
C
80
V
GE
[V]
10
[A]
60
40
T
VJ
= 125°C
20
0
T
VJ
= 25°C
5
6
7
8
9
10
11
12
13
5
0
0
50
100
150
200
250
300
V
GE
[V]
Fig. 3 Typ. tranfer characteristics
16
14
12
10
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
10
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
9
E
8
E
[mJ]
E
off
E
on
0
20
40
60
80
100
120
140
160
8
E
off
[mJ]
6
4
2
0
7
E
on
6
I
C
=
75 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
5
I
C
[A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
8
10
12
14
16
18
20
22
24
R
G
[Ω]
Fig. 6 Typ. switching energy vs. gate resistance
20110518a
© 2011 IXYS All rights reserved
5-6
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