switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode air
-bridges during handling and assembly. Off chip
bias circuitry is required.
Yellow areas indicate bond pads
J3
J4
J2
J5
J1
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+300°C < 10 sec
+175°C
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Electrical Specifications @ T
A
= 25°C, +/-10mA bias current
(On-wafer measurements)
RF SPECIFICATIONS
PARAMETER
INSERTION LOSS
18 - 50 GHz
0.05 - 18 GHz
ISOLATION
18 - 50 GHz
25
32
dB
25
1.0
41
1.4
dB
dB
FREQUENCY BAND
0.05 - 18 GHz
MIN
TYP
0.7
MAX
0.8
UNITS
dB
INPUT RETURN LOSS
0.05 - 18 GHz
18 - 50 GHz
10
10
21
22
dB
dB
0.05 - 18 GHz
OUTPUT RETURN LOSS
18 - 50 GHz
SWITCHING SPEED
10 GHz
10
10
26
17
20
dB
dB
nS
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven
by a TTL compatible driver. Driver output parallel RC network uses a capacitor between
390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Typical R.F. Performance (Probed on Wafer) @ +25°C
TYPICAL INSERTION LOSS @ -10 mA
0
-0.5
IL ( dB )
-1
-1.5
-2
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
TYPICAL ISOLATION @ +10 mA
0
-10
-20
-30
-40
-50
-60
-70
-80
0.00
ISOL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Typical RF Performance (Probed on wafer) @ +25°C
TYPICAL INPUT RETURN LOSS @ -10 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00
IRL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
TYPICAL OUTPUT RETURN LOSS @ -10 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00
ORL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J3 & J4
J2 & J5
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW4
SP4T AlGaAs PIN Diode Switch
Rev. V4
Operation of the MA4AGSW4 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW4, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3, J4 & J5 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design shown below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the
MA4BN1840-1
and
MA4BN1840-2
for additional information.
The lowest insertion loss, P1dB, IP
3
, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW4 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2
-10mA
+10mA
+10mA
+10mA
5
CONDITION OF RF OUTPUT
J2-J1
Low Loss
Isolation
Isolation
Isolation
J3-J1
Isolation
Low Loss
Isolation
Isolation
J4-J1
Isolation
Isolation
Low Loss
Isolation
J5-J1
Isolation
Isolation
Isolation
Low Loss
J3
+10mA
-10mA
+10mA
+10mA
J4
+10mA
+10mA
-10mA
+10mA
J5
+10mA
+10mA
+10mA
-10mA
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
//
// Set DCO Frequency
//
void setDCO(unsigned long freq)
{
unsigned char old_BCSCTL1;
unsigned int old_TACCTL2;
unsigned int old_TACTL;
unsigned int clkCnt;
un ......
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