• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
S
D
Top View
G
D
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
G
Ordering Information:
SUM50020EL-GE3 (lead (Pb)-free and halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
120
d
120
d
300
75
281
375
b
125
b
-55 to +175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.4
UNIT
°C/W
S15-1868-Rev. A, 10-Aug-15
Document Number: 68587
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM50020EL
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
-
-
-
-
-
-
0.32
-
-
-
-
11 113
4625
475
126
31.2
7.1
1.6
15
20
55
11
-
-
-
-
-
-
3.2
30
40
100
20
ns
Ω
nC
pF
I
D(on)
R
DS(on)
g
fs
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 30 A
60
1.2
-
-
-
-
120
-
-
-
-
-
-
-
-
-
-
0.0017
0.0021
145
-
2.5
± 250
1
150
5
-
0.0021
0.0026
-
V
nA
μA
mA
A
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Vishay Siliconix
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs)
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 39 A, di/dt = 100 A/μs
I
F
= 10 A, V
GS
= 0 V
-
-
-
-
-
-
0.8
120
5
0.287
300
1.5
180
10
0.430
A
V
ns
A
μC
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1868-Rev. A, 10-Aug-15
Document Number: 68587
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM50020EL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 4 V
Vishay Siliconix
100
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
150
T
C
= 25
°C
60
100
40
T
C
= 125
°C
50
V
GS
=3V
20
T
C
= - 55
°C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
200
0.0030
g
fs
- Transconductance (S)
150
R
DS(on)
- On-Resistance (Ω)
T
C
= 25
°C
0.0025
V
GS
=4.5V
0.0020
V
GS
= 10 V
T
C
= - 55
°C
100
T
C
= 125
°C
50
0.0015
0.0010
0
0
6
12
18
24
30
I
D
- Drain Current (A)
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
14000
C
iss
10500
C - Capacitance (pF)
10
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 48 V
4
V
DS
= 30 V
7000
C
oss
3500
C
rss
0
0
15
30
45
V
DS
- Drain-to-Source Voltage (V)
60
2
0
0
35
70
105
140
Q
g
- Total
Gate
Charge (nC)
Capacitance
S15-1868-Rev. A, 10-Aug-15
Gate Charge
Document Number: 68587
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM50020EL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.90
2.4
I
D
= 250 μA
R
DS(on)
- On-Resistance (Normalized)
1.65
V
GS
= 10 V, I
D
= 30 A
Vishay Siliconix
2
1.40
V
GS
= 4.5 V, I
D
= 20 A
V
GS(th)
(V)
1.6
1.15
1.2
0.90
0.8
0.65
-50
-25
0
25
50
75
100 125
T
J
- Junction Temperature (°C)
150
175
0.4
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
0.006
I
D
= 30 A
V
DS
(V) Drain -to-Source Voltage
74
I
D
= 250 μA
72
R
DS(on)
- On-Resistance (Ω)
0.004
T
J
= 125 °C
T
J
= 25 °C
70
68
0.002
66
0
0
1.5
3
4.5
6
7.5
V
GS
-
Gate
-to -Source Voltage (V)
9
64
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
100
312
260
I
S
-
Source
Current (A)
T
J
= 150
°C
I
D
- Drain Current (A)
10
208
156
1
T
J
= 25
°C
104
52
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-
to- Drain Voltage (V)
1.2
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Source Drain Diode Forward Voltage
S15-1868-Rev. A, 10-Aug-15
Current De-rating
Document Number: 68587
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM50020EL
www.vishay.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100 us
100
I
D
Limited
Vishay Siliconix
100
I
D
- Drain Current (A)
10
1
Limited by R
DS(on)
*
10 ms
100 ms
DC
I
DAV
(A)
1 ms
25 °C
150 °C
0.1
T
C
= 25
°C
Single
Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain- to-
Source
Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
10
0.00001
0.0001
Time (s)
0.001
0.01
Safe Operating Area
1
Single Pulse Avalanche Current Capability vs. Time
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