BTA412Y series B and C
12 A three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 02 — 11 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
I
Very high commutation performance
I
Isolated mounting base
I
High operating junction temperature
I
High immunity to dV/dt
I
2500 V RMS isolation voltage
1.3 Applications
I
Heating and cooking appliances
I
High power motor control e.g. vacuum
cleaners
I
Solid state relays
I
Non-linear rectifier-fed motor loads
I
Electronic thermostats for heating and
cooling loads
1.4 Quick reference data
I
V
DRM
≤
600 V (BTA412Y-600B/C)
I
V
DRM
≤
800 V (BTA412Y-800B/C)
I
I
T(RMS)
≤
12 A
I
I
GT
≤
50 mA (BTA412Y series B)
I
I
GT
≤
35 mA (BTA412Y series C)
I
I
TSM
≤
140 A (t = 20 ms)
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78D (TO-220)
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA412Y-600B
BTA412Y-600C
BTA412Y-800B
BTA412Y-800C
TO-220
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
Conditions
BTA412Y-600B; BTA412Y-600C
BTA412Y-800B; BTA412Y-800C
full sine wave; T
mb
≤
116
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
t
p
= 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
-
-
-
-
-
-
140
153
98
100
4
5
A
A
A
2
s
A/µs
A
W
[1]
Min
-
-
-
Max
600
800
12
Unit
V
V
A
BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
2 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
Table 3.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
G(AV)
T
stg
T
j
[1]
Parameter
average gate power
storage temperature
junction temperature
Conditions
over any 20 ms period
Min
-
−40
-
Max
1
+150
150
Unit
W
°C
°C
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
16
P
tot
(W)
12
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
003aab810
α
= 180°
120°
90°
α
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
003aab811
160
I
TSM
(A)
120
80
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
3 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
10
3
I
TSM
(A)
003aab812
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab813
003aab814
40
I
T(RMS)
(A)
30
15
I
T(RMS)
(A)
10
20
5
10
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz
T
mb
= 116
°C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of
mounting base temperature; maximum values
BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
4 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
60
Max
2.1
-
Unit
K/W
K/W
thermal resistance from junction to full cycle; see
Figure 6
mounting base
thermal resistance from junction to in free air
ambient
10
Z
th(j-mb)
(K/W)
1
003aab815
10
−1
P
10
−2
t
p
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
Conditions
Min
-
Typ
-
Max
2500
Unit
V
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
≤
65 %; clean and dust free
isolation capacitance
from pin 2 to external heatsink;
f = 1 MHz
C
isol
-
10
-
pF
BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
5 of 12
传感器
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