TO
-22
0A
B
BTA204-800E
3Q Hi-Com Triac
Rev. 5 — 9 May 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs
including microcontrollers.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct triggering from low power
drivers and logic ICs
High blocking voltage capability
High commutation capability
Planar passivated for voltage
ruggedness and reliability
Sensitive gate for easy logic level
triggering
Triggering in three quadrants only
1.3 Applications
AC solenoids
General purpose motor control
Home appliances
1.4 Quick reference data
Table 1.
V
DRM
I
TSM
Quick reference data
Conditions
Min
-
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
107 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
-
Typ
-
-
Max Unit
800
25
V
A
repetitive peak off-state
voltage
non-repetitive peak
on-state current
RMS on-state current
Symbol Parameter
I
T(RMS)
-
-
4
A
NXP Semiconductors
BTA204-800E
3Q Hi-Com Triac
Quick reference data
…continued
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
-
-
-
Typ
-
-
-
Max Unit
10
10
10
mA
mA
mA
Table 1.
Symbol Parameter
Static characteristics
I
GT
gate trigger current
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA204-800E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BTA204-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 9 May 2011
2 of 14
NXP Semiconductors
BTA204-800E
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤
107 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
800
4
25
27
3.1
100
2
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
5
I
T(RMS)
(A)
4
003aad615
12
I
T(RMS )
(A)
10
003aag083
107 °C
8
3
6
2
4
1
2
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA204-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 9 May 2011
3 of 14
NXP Semiconductors
BTA204-800E
3Q Hi-Com Triac
8
P
tot
(W)
6
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
a = 180 °
a
003aag081
101
T
mb(max)
104 (°C)
107
110
113
116
120 °
90 °
60 °
30 °
4
2
119
122
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
Fig 3.
10
3
I
TS M
(A)
Total power dissipation as a function of RMS on-state current; maximum values
003aag085
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
Fig 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 9 May 2011
4 of 14
NXP Semiconductors
BTA204-800E
3Q Hi-Com Triac
30
I
TSM
(A)
003aag086
20
10
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 9 May 2011
5 of 14
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