RF JFET Transistors Lu0026S Band GaAs HJFET
参数名称 | 属性值 |
产品种类 Product Category | RF JFET Transistors |
制造商 Manufacturer | CEL |
RoHS | Details |
Transistor Type | HFET |
技术 Technology | GaAs |
Gain | 10 dB |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 8 V |
Vgs - Gate-Source Breakdown Voltage | - 4 V |
Id - Continuous Drain Current | 2.8 A |
Output Power | 35 dBm |
最大工作温度 Maximum Operating Temperature | + 150 C |
Pd-功率耗散 Pd - Power Dissipation | 15 W |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | 79A |
系列 Packaging | Bulk |
Operating Frequency | 1.9 GHz |
P1dB - Compression Point | 35 dBm |
产品 Product | RF JFET |
类型 Type | GaAs HFET |
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