This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP90N08-8m2P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 75 A, di/dt = 100 A/µs
I
F
= 30 A, V
GS
= 0 V
0.85
61
2.7
83
V
DD
= 38 V, R
L
= 3.1
I
D
12.5 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 38 V, V
GS
= 10 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
3528
470
178
58
21
16
1.8
21
15
32
10
3.5
35
25
55
20
ns
90
nC
pF
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
10
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
DS
= 15 V, I
D
= 30 A
70
0.0069
0.0116
55
0.0082
0.014
75
2.8
4.8
± 250
1
50
250
A
S
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
83
200
1.5
100
4.5
140
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69615
S12-1616-Rev. B, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP90N08-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
180
160
140
I
D
- Drain Current (A)
120
100
80
6
V
60
40
20
0
0
1
2
3
4
5
6
7
8
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
9
10
4
V
5
V
0
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source
Voltage
(V)
9
10
I
D
- Drain Current (A)
7
V
V
GS
= 10 thru
8 V
160
200
120
80
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
40
Output Characteristics
90
80
70
g
fs
- Transconductance (S)
60
50
40
30
20
10
0
0
10
20
30
40
I
D
- Drain Current (A)
50
60
0.00
4
5
125 °C
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
0.20
Transfer Characteristics
I
D
= 30 A
25 °C
0.15
T
A
= 25 °C
0.10
0.05
T
A
= 150 °C
6
7
8
9
V
GS
- Gate-to-Source
Voltage
(V)
10
Transconductance
0.009
R
DS(on)
- D to S On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage vs.Temperature
4500
4000
0.008
C - Capacitance (pF)
C
iss
3500
3000
2500
2000
1500
1000
500
C
oss
C
rss
0
10
30
40
50
60
V
DS
- Drain-to-Source
Voltage
(V)
20
70
80
0.007
V
GS
= 10
V
0.006
0.005
0.004
0
20
40
60
80
100 120 140 160 180 200
I
D
- Drain Current (A)
0
On-Resistance vs. Drain Current
Document Number: 69615
S12-1616-Rev. B, 09-Jul-12
Capacitance
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP90N08-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
1.0
2.0
I
D
= 30 A,
V
GS
= 10
V
1.5
V
GS(th)
Variance
(V)
0.5
0.0
I
D
= 5 mA
- 0.5
I
D
= 250
µA
1.0
- 1.0
0.5
- 1.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
- 2.0
- 50
- 25
T
J
- Junction Temperature (°C)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
On-Resistance vs. Junction Temperature
10
I
D
= 15 A
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 38
V
8
V
DS
= 60
V
V
DS
(normalized)
90
95
Threshold Voltage
I
D
= 250
µA
85
6
4
80
2
75
0
0
10
20
30
40
Q
g
- Total Gate Charge (nC)
50
60
70
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
Drain Source Breakdown vs. Junction Temperature
120
10
I
S
- Source Current (A)
I
D
- Drain Current (A)
T
J
= 150 °C
1.0
100
80
60
0.1
T
J
= 25 °C
40
0.01
20
0.001
0.0
0
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain
Voltage
(V)
1.0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Source-Drain Diode Forward Voltage
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4
Maximum Drain Current vs. Case Temperature
Document Number: 69615
S12-1616-Rev. B, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP90N08-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1000
Limited
by
r
DS(on)
*
100
I
D
- Drain Current (A)
0.1 s
10
1s
10 s
DC
I
DAV
(A)
1
0.1
0.01
T
C
= 25 °C
Single Pulse
1
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
10
0.000001
0.000010
0.0001
t
in
(s)
0.001
0.01
0.001
0.1
*
V
GS
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?69615.
Document Number: 69615
S12-1616-Rev. B, 09-Jul-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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