BC856BMB
19 August 2015
60 V, 100 mA PNP general-purpose transistor
Product data sheet
1. General description
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B)
Surface-Mounted Device (SMD) plastic package.
NPN complement: BC846BMB.
2. Features and benefits
•
•
•
•
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
Power dissipation comparable to SOT23
AEC-Q101 qualified
3. Applications
•
•
General-purpose switching and amplification
Mobile applications
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
Conditions
open base
Min
-
-
220
Typ
-
-
-
Max
-60
-100
475
Unit
V
mA
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
B
E
C
base
emitter
collector
Simplified outline
1
3
2
Transparent
top view
1
2
sym013
Graphic symbol
3
DFN1006B-3 (SOT883B)
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
6. Ordering information
Table 3.
Ordering information
Package
Name
BC856BMB
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3
solder lands; body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
Type number
7. Marking
Table 4.
Marking codes
Marking code
0101 1010
PIN 1 INDICATION
READING DIRECTION
Type number
BC856BMB
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
BC856BMB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 August 2015
2 / 12
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
-80
-60
-6
-100
-200
-200
250
150
150
150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
single pulse; t
p
≤ 1 ms
-
-
T
amb
≤ 25 °C
[1]
-
-
-55
-65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
300
P
tot
(mW)
200
aaa-019152
100
0
-75
-25
25
75
125
T
j
(°C)
175
FR4 PCB, standard footprint
Fig. 2.
Power derating curve DFN1006B-3 (SOT883B)
BC856BMB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 August 2015
3 / 12
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
[1]
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab603
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.2
0.1
0.05
0.02
0.75
0.33
10
0.01
0
1
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC856BMB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 August 2015
4 / 12
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
10. Characteristics
Table 7.
Symbol
I
CBO
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
V
CB
= -30 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C
I
C
= -100 mA; I
B
= -5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
V
BEsat
base-emitter saturation I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C
voltage
I
C
= -100 mA; I
B
= -5 mA; T
amb
= 25 °C
base-emitter voltage
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 mA; T
amb
= 25 °C
C
C
C
E
f
T
NF
collector capacitance
emitter capacitance
transition frequency
noise figure
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
V
CE
= -5 V; I
C
= -200 µA; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz; T
amb
= 25 °C
-
-
10
dB
100
-
-
MHz
-
4.5
-
pF
-
-
-600
-
-
-700
-850
-
-
-
-
-
-750
-820
2.5
mV
mV
mV
mV
pF
Min
-
-
-
220
-
-
Typ
-
-
-
-
-
-
Max
-15
-5
-100
475
-200
-400
mV
mV
Unit
nA
µA
nA
I
EBO
h
FE
V
CEsat
V
BE
BC856BMB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 August 2015
5 / 12
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