TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060
2N2060L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N2060
60
100
7.0
500
Unit
Vdc
Vdc
Vdc
mAdc
One
Both
Section Sections
Total Power Dissipation
@ T
A
= +25
0
C
(1)
540
600
P
T
0 (2)
@ T
C
= +25 C
1.5
2.12
Operating & Storage Junction Temperature Range
-65 to +200
T
J
,
T
stg
0
0
0
1) Derate linearly 3.08 mW/ C for T
A
> 25 C for one section, 3.48 mW/ C for both sections
2) Derate linearly 8.6 mW/
0
C for T
C
> 25
0
C for one section, 12.1 mW/
0
C for both sections
mW
W
0
C
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CER
V
(BR)
CEO
I
CBO
Min.
80
60
10
2.0
10
2.0
Max.
Unit
Vdc
Vdc
µAdc
ηAdc
µAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
R
BE
≤
10
Ω,
I
C
= 10 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 10
µAdc,
V
CE
= 5.0 Vdc
I
C
= 100
µAdc,
V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
Base-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
h
FE
25
30
40
50
75
90
120
150
0.3
0.9
Vdc
Vdc
V
CE(sat)
V
BE(sat)
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CB
= 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Input Capacitance
V
EB
= 0.5 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
(3)Pulse Test: Pulse Width 250 to 350µs, Duty Cycle
≤
2.0%.
h
fe
h
ib
h
fe
h
ie
h
oe
C
ibo
C
obo
3
20
50
1,000
0
25
30
150
4,000
16
85
15
Ω
µmhos
pF
pF
Ω
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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