Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
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salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
BC54PAS; BC55PAS; BC56PAS
D-3
DF
45V/60V/80V, 1A NPN medium power transistors
Rev. 1 — 11 November 2014
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series encapsulated in an ultra thin
DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability and visible and solderable side pads.
Table 1.
BC54PAS
BC55PAS
BC56PAS
[1]
Valid for all available selection groups.
N2
020
Product overview
Package
DFN2020D-3
SOT1061D
PNP complement
BC51PAS
BC52PAS
BC53PAS
Type number
[1]
1.2 Features and benefits
High collector current capability I
C
and
Three current gain selections
I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
Low-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
Quick reference data
Parameter
collector-emitter voltage
BC54PAS
BC55PAS
BC56PAS
I
C
collector current
Conditions
open base
-
-
-
-
-
-
-
-
45
60
80
1
V
V
V
A
Min
Typ
Max Unit
NXP Semiconductors
BC54PAS; BC55PAS; BC56PAS
45V/60V/80V, 1A NPN medium power transistors
Quick reference data
…continued
Parameter
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
Conditions
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Table 2.
Symbol
I
CM
h
FE
Min
-
63
63
100
Typ
-
-
-
-
Max Unit
2
250
160
250
A
[1]
Pulse test: t
p
300
s;
0.02
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
3
1
2
1
2
sym021
Simplified outline
Graphic symbol
3
Transparent top view
3. Ordering information
Table 4.
Ordering information
Package
Name
BC54PAS
BC55PAS
BC56PAS
[1]
Valid for all available selection groups.
Type number
[1]
Description
DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2
2
0.65 mm.
Version
SOT1061D
DFN2020D-3
BC54_55_56PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 11 November 2014
2 of 14
NXP Semiconductors
BC54PAS; BC55PAS; BC56PAS
45V/60V/80V, 1A NPN medium power transistors
4. Marking
Table 5.
BC54PAS
BC54-10PAS
BC54-16-PAS
BC55PAS
BC55-10PAS
BC55-16PAS
BC56PAS
BC56-10PAS
BC56-16PAS
Marking codes
Marking code
CD
CE
CF
CG
CH
CJ
CK
CL
CM
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
Parameter
collector-base voltage
BC54PAS
BC55PAS
BC56PAS
V
CEO
collector-emitter voltage
BC54PAS
BC55PAS
BC56PAS
V
EBO
I
C
I
CM
I
B
emitter-base voltage
collector current
peak collector current
base current
single pulse;
t
p
1 ms
open collector
open base
-
-
-
-
-
-
-
45
60
80
5
1
2
0.3
V
V
V
V
A
A
A
Conditions
open emitter
-
-
-
45
60
100
V
V
V
Min
Max
Unit
BC54_55_56PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 11 November 2014
3 of 14
NXP Semiconductors
BC54PAS; BC55PAS; BC56PAS
45V/60V/80V, 1A NPN medium power transistors
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
25
C
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
55
65
Max
0.42
0.81
0.83
1.10
1.65
150
150
150
Unit
W
W
W
W
W
C
C
C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
2.0
P
tot
(W)
1.5
(1)
006aac676
(2)
1.0
(3)
(4)
0.5
(5)
0.0
–75
–25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, single-sided copper, 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
Power derating curves
BC54_55_56PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 11 November 2014
4 of 14
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