Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The Si1865DDL includes a p- and n-channel MOSFET in
a single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DDL operates
on supply lines from 1.8 V to 12 V, and can drive loads up to
1.1 A.
APPLICATIONS
• Load Switch with Level-Shift
• Slew-rate Control
• Portable/Consumer Devices
APPLICATION CIRCUITS
Si1865DDL
14
4
V
IN
Q2
6
R1
2, 3
V
OUT
Time (us)
10.5
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
r
t
f
C1
6
7
5
ON/OFF
Q1
C
o
LOAD
3.5
t
d(off)
t
d(on)
0
C
i
1
R2
R2
GND
0
2
4
R
2
(kΩ)
6
8
10
Switching Variation R2 at V
IN
= 2.5 V, R1 = 20 k
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 k to 1 M
a
Typical 0 to 100 k
a
Typical 1000 pF
The Si1865DDL is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Note:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si1865DDL
SC70-6
S2
R2
1
6
R1, C1
Marking Code
VD
D2
2
5
ON/OFF
XXX
Lot Traceability
and Date Code
Part # Code
D2
3
4
S2
ON/OFF
5
Q1
Q2
6
R1, C1
4
2, 3
D2
Ordering Information:
Si1865DDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
1
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Input Voltage
On/Off Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
)
Continuous
a, b
Pulsed
b, c
Symbol
V
IN
(V
DS2
)
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
12
8
± 1.1
±5
- 0.3
0.357
- 55 to 150
2
W
°C
kV
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (continuous current)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJF
Typical
290
250
Maximum
350
300
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Off Characteristics
Reverse Leakage Current
Diode Forward Voltage
On Characteristics
Input Voltage Range
On-Resistance (P-Channel)
V
IN
V
ON/OFF
= 1.5 V, V
IN
= 4.5 V, I
D
= 1.1 A
R
DS(on)
V
ON/OFF
= 1.5 V, V
IN
= 2.5 V, I
D
= 0.9 A
V
ON/OFF
= 1.5 V, V
IN
= 1.8 V, I
D
= 0.2 A
On-State (P-Channel) Drain-Current
I
D(on)
V
IN-OUT
0.2
V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
V
IN-OUT
0.3
V, V
IN
= 3 V, V
ON/OFF
= 1.5 V
1
1
1.8
0.165
0.250
0.376
12
0.200
0.300
0.508
A
V
I
FL
V
SD
V
IN
= 12 V, V
ON/OFF
= 0 V
I
S
= - 0.8 A
- 0.84
1
- 1.2
µA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Surface mounted on FR4 board.
b. V
IN
= 12 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c. Pulse test: pulse width
300
µs, duty cycle
2
%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
V
GS
= 5 V thru 3 V
4
I
D
- Drain Current (A)
1.8
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125
o
C
V
GS
=2.5V
1.4
3
V
DROP
(V)
V
GS
=2V
2
V
GS
=1.8V
0.9
0.5
1
T
J
= 25
o
C
V
GS
= 1.5 V
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0.0
0
1.5
3
I
L
(A)
4.5
6
Output Characteristics
1.5
V
DROP
vs. I
L
at V
IN
= 4.5 V
0.5
V
ON/OFF
= 1.5 V to 8 V
1.2
T
J
= 125
o
C
0.4
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125
o
C
V
DROP
(V)
0.6
V
DROP
(V)
0.9
0.3
0.2
0.3
T
J
= 25
o
C
0.0
0
0.6
1.2
I
L
(A)
1.8
2.4
3
0.1
T
J
= 25
o
C
0.0
0
0.2
0.4
I
L
(A)
0.6
0.8
1
V
DROP
vs. I
L
at V
IN
= 2.5 V
V
DROP
vs. I
L
at V
IN
= 1.8 V
0.4
1.8
R
DS(on)
- On-Resistance (Normalized)
I
L
= 1 A
V
ON/OFF
= 1.5 V to 8 V
1.6
I
L
= 1 A
V
ON/OFF
= 1.5 V to 8 V
V
GS
= 4.5 V
0.3
1.4
V
GS
= 2.5 V
1.2
V
GS
= 1.8 V
V
DROP
(V)
T
J
= 125
°C
0.2
T
J
= 25
°C
0.1
1.0
0.8
0
0
2
4
V
IN
- (V)
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
V
DROP
vs. V
IN
at I
L
= 1 A
Normalized On-Resistance vs. Junction Temperature
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.4
I
L
= 1 A
V
ON/OFF
= 1.5 V to 8 V
10
R
DS(on)
- On-Resistance (Ω)
T
J
= 125
°C
0.2
I
S
- Source Current (A)
0.3
T
J
= 150
°C
1
T
J
= 25
°C
T
J
= 25
°C
0.1
0
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Input Voltage
Source-Drain Diode Forward Voltage
18
13.5
t
f
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
14
10.5
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
r
t
f
Time (us)
9
Time (us)
t
d(off)
7
4.5
t
r
t
d(on)
3.5
t
d(off)
t
d(on)
0
0
2
4
R
2
(kΩ)
6
8
10
0
0
2
4
R
2
(kΩ)
6
8
10
Switching Variation R2 at V
IN
= 4.5 V, R1 = 20 k
20
Switching Variation R2 at V
IN
= 2.5 V, R1 = 20 k
15
Time (us)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
150
120
t
f
t
d(off)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
r
10
Time (us)
90
t
f
5
60
t
d(off)
0
0
30
t
r
t
d(on)
0
20
40
R
2
(kΩ)
60
80
100
t
d(on)
2
4
R
2
(kΩ)
6
8
10
0
Switching Variation R2 at V
IN
= 1.8 V, R1 = 20 k
Switching Variation R2 at V
IN
= 4.5 V, R1 = 300 k
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?62888.
Document Number: 62888
S13-2618-Rev. B, 23-Dec-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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