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MJ11015

产品描述Darlington Transistors 30A 120V Bipolar
产品类别分立半导体    晶体管   
文件大小113KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJ11015概述

Darlington Transistors 30A 120V Bipolar

MJ11015规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-3
包装说明FLANGE MOUNT, O-MBFM-P2
针数2
制造商包装代码CASE 1-07
Reach Compliance Codenot_compliant
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)30 A
集电极-发射极最大电压120 V
配置DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)200
JEDEC-95代码TO-204AA
JESD-30 代码O-MBFM-P2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度200 °C
最低工作温度-55 °C
封装主体材料METAL
封装形状ROUND
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)240
极性/信道类型PNP
最大功率耗散 (Abs)200 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn80Pb20)
端子形式PIN/PEG
端子位置BOTTOM
处于峰值回流温度下的最长时间30
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)4 MHz

文档预览

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MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current
Complementary Silicon
Transistors
. . . for use as output devices in complementary general purpose
amplifier applications.
http://onsemi.com
High DC Current Gain
h
FE
= 1000 (Min) @ I
C
20 Adc
Monolithic Construction with Built−in Base Emitter Shunt
Resistor
Junction Temperature to + 200_C
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJ11012
MJ11015/6
MJ11012
MJ11015/6
Symbol
V
CEO
Value
60
120
60
120
5
30
1
200
1.15
−55
to + 200
Unit
Vdc
30 AMPERE DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60
120 VOLTS, 200 WATTS
NPN
COLLECTOR
CASE
BASE
1
BASE
1
PNP
COLLECTOR
CASE
Collector−Base Voltage
V
CB
Vdc
EMITTER 2
MJ11016
MJ11012
EMITTER 2
MJ11015
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C @ T
C
= 100°C
Operating Storage Junction
Temperature Range
V
EB
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
1
2
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ1101x = Device Code
x = 2, 5 or 6
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Sol-
dering Purposes for
10 Seconds
Symbol
R
qJC
T
L
Max
0.87
275
Unit
°C/W
°C
MJ1101xG
AYYWW
MEX
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MJ11012
MJ11012G
MJ11015
MJ11015G
MJ11016
MJ11016G
Package
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
September, 2008
Rev. 5
1
Publication Order Number:
MJ11012/D

 
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