Cypress Developer Community ................................. 14
Technical Support ..................................................... 14
Document Number: 38-07348 Rev. *J
Page 2 of 14
CY2CC910
Pin Configuration
Figure 1. 20-pin SOIP/SSOP pinout
IN
GND
Q1
VDD
Q2
GND
Q3
VDD
Q4
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VDD
Q10
Q9
GND
Q8
VDD
Q7
GND
Q6
Q5
20 pin SOIC/SSOP
Pin Description
Pin Number
1
2, 6, 10, 13, 17
4, 8, 15, 20
3, 5, 7, 9, 11, 12, 14, 16, 18, 19
IN
Pin Name
Input
Ground
Power Supply
Description
G
ND
V
DD
Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, Q9, Output
Q10
Document Number: 38-07348 Rev. *J
CY2CC910
Page 3 of 14
CY2CC910
Maximum Ratings
Exceeding maximum ratings
[1]
may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature:................................ –65C to +150C
Ambient temperature: ................................. –40C to +85C
Supply voltage to ground potential
V
CC
.................................................................–0.5 V to 4.6 V
Input................................................................–0.5 V to 5.8 V
Supply voltage to ground potential
(Outputs only) ......................................... –0.5 V to V
DD
+ 1 V
DC output voltage................................... –0.5 V to V
DD
+ 1 V
Power dissipation ....................................................... 0.75 W
DC Electrical Characteristics
At 3.3 V (See
Figure 2)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input high current
Input low current
Input high current
Clamp diode voltage
Continuous clamp current
Power-down disable
Input hysteresis
Conditions
V
DD
= Min, V
IN
= V
IH
or I
OH
= –12 mA
V
IL
V
DD
= Min, V
IN
= V
IH
or I
OL
= 12 mA
V
IL
Guaranteed Logic High Level
Guaranteed Logic Low Level
V
DD
= Max
V
DD
= Max
V
IN
= 2.7 V
V
IN
= 0.5 V
Min
2.3
–
2
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–0.7
–
–
80
Max
–
0.5
5.8
0.8
1
–1
20
–1.2
–50
100
–
Unit
V
V
V
V
A
A
A
V
mA
A
mV
V
DD
= Max, V
IN
= V
DD
(Max)
V
DD
= Min, I
IN
= –18 mA
V
DD
= Max, V
OUT
= GND
V
DD
= GND, V
OUT
= < 4.5 V
DC Electrical Characteristics
At 2.5 V (See
Figure 2)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input high current
Input low current
Input high current
Clamp diode voltage
Continuous clamp current
Power down disable
Input hysteresis
Conditions
V
DD
= Min, V
IN
= V
IH
or I
OH
= –7 mA
V
IL
I
OH
= 12 mA
V
DD
= Min, V
IN
= V
IH
or I
OL
= 12 mA
V
IL
Guaranteed Logic High Level
Guaranteed Logic Low Level
V
DD
= Max
V
DD
= Max
V
IN
= 2.4 V
V
IN
= 0.5 V
1.6
–
–
–
–
–
–
–
–
80
Min
1.8
1.6
Typ
–
–
–
–
–
–
–
–
–0.7
Max
–
–
0.65
5.0
0.8
1
–1
20
–1.2
–50
100
–
Unit
V
V
V
V
V
A
A
A
V
mA
A
mV
V
DD
= Max, V
IN
= V
DD
(Max)
V
DD
= Min, I
IN
= –18 mA
V
DD
= Max, V
OUT
= GND
V
DD
= GND, V
OUT
= < 4.5 V
Note
1. Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is intended to be a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Document Number: 38-07348 Rev. *J
Page 4 of 14
CY2CC910
DC Electrical Characteristics
At 1.8 V (See
Figure 6)
Parameter
V
DD
V
IH
V
IL
V
OH
V
OL
Description
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
I
OH
= –2 mA
I
OH
= 2 mA
Test Condition
[2]
Min
1.71
0.65 × V
DD
[1.1]
–0.3
V
DD
– 0.45 [1.2]
–
Max
1.89
4.3
0.35 × V
DD
[0.6]
–
0.45
Unit
V
V
V
V
V
Capacitance
Parameter
[3]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
V
IN
= 0 V
V
OUT
= 0 V
Test Conditions
Typ
2.5
6.5
Max
–
–
Unit
pF
pF
Thermal Resistance
Parameter
[3]
θ
JA
θ
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
20-pin SSOP
79
35
Unit
°C/W
°C/W
Power Supply Characteristics
(See
Figure 2)
Parameter
ICC
Description
Delta I
CC
Quiescent Power
Supply Current
Dynamic power supply current
Test Conditions
(I
DD
@ V
DD
= Max and V
IN
= V
DD
) –
(I
DD
@ V
DD
= Max and
V
IN
= V
DD
– 0.6 V6 V)
V
DD
= Max
Input toggling 50% Duty Cycle,
Outputs Open
V
DD
= Max
Input toggling 50% Duty Cycle,
Outputs Open, fL = 40 MHZ
Min
–
Typ
–
Max
50
Unit
A
I
CCD
–
–
0.63
mA/
MHz
mA
I
C
Total power supply current
–
–
25
Notes
2. Test load conditions: 500-Ohm to ground with approximately 6-pF total loading and 200-MHz maximum frequency.
3. These parameters are guaranteed by design and are not tested.
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