PD - 95327
IRG4PC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz
in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Lead-Free
UltraFast CoPack IGBT
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.95V
@V
GE
= 15V, I
C
= 12A
n-channel
Benefits
Generation -4 IGBT's offer highest efficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
1.2
2.5
------
40
------
Units
°C/W
g (oz)
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1
6/1/04
IRG4PC30UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ----
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
----
----
Gate Threshold Voltage
3.0
V
GE(th)
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
3.1
Zero Gate Voltage Collector Current
----
I
CES
----
V
FM
Diode Forward Voltage Drop
----
----
I
GES
Gate-to-Emitter Leakage Current
----
Typ. Max. Units
----
----
V
0.63 ---- V/°C
1.95 2.1
2.52 ----
V
2.09 ----
---- 6.0
-11 ---- mV/°C
8.6 ----
S
---- 250
µA
---- 2500
1.4 1.7
V
1.3 1.6
---- ±100 n A
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 12A
V
GE
= 15V
I
C
= 23A
See Fig. 2, 5
I
C
= 12A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 12A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 12A
See Fig. 13
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
50
8.1
18
40
21
91
80
0.38
0.16
0.54
40
22
120
180
0.89
13
1100
73
14
42
80
3.5
5.6
80
220
180
120
Max. Units
Conditions
75
I
C
= 12A
12
nC
V
CC
= 400V
See Fig. 8
27
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 12A, V
CC
= 480V
140
V
GE
= 15V, R
G
= 23Ω
130
Energy losses include "tail" and
----
diode reverse recovery.
----
mJ
See Fig. 9, 10, 11, 18
0.9
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
----
ns
I
C
= 12A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 23Ω
----
Energy losses include "tail" and
----
mJ
diode reverse recovery.
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
= 1.0MHz
60
ns
T
J
= 25°C See Fig.
120
T
J
= 125°C
14
I
F
= 12A
6.0
A
T
J
= 25°C See Fig.
10
T
J
= 125°C
15
V
R
= 200V
180
nC
T
J
= 25°C See Fig.
600
T
J
= 125°C
16
di/dt 200A/µs
---- A/µs T
J
= 25°C See Fig.
----
T
J
= 125°C
17
2
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IRG4PC30UDPbF
20
16
Load Current ( A )
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 24W
60% of rated
voltage
12
8
4
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
0.1
5
6
7
8
V
CC
= 10V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC30UDPbF
Maximum DC Collector Current (A
25
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
= 15V
3.0
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 24A
20
2.5
15
I
C
= 12A
2.0
10
5
I
C
= 6.0A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
A
150
1.5
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t2
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30UDPbF
2000
C, Capacitance (pF)
1600
V
GE
, Gate-to-Emitter Voltage (V)
A
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 12A
16
C
ies
1200
12
800
C
oes
C
res
8
400
4
0
1
10
0
0
10
20
30
40
A
50
100
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.60
Total Switchig Losses (mJ)
0.58
Total Switchig Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 12A
10
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 24A
0.56
1
I
C
= 12A
I
C
= 6.0A
0.54
0.52
0.50
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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