Datasheet> 器件分类 > 半导体> 分立半导体> RN2102T5LFT

RN2102T5LFT: 产品描述Bipolar Transistors - Pre-Biased Gen Purp Trans PNP SSM, -50V, -100A; 产品类别半导体分立半导体; 文件大小569KB，共9页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2102T5LFT概述

Bipolar Transistors - Pre-Biased Gen Purp Trans PNP SSM, -50V, -100A

RN2102T5LFT规格参数

参数名称	属性值
产品种类 Product Category	Bipolar Transistors - Pre-Biased
制造商 Manufacturer	Toshiba(东芝)
RoHS	Details
Configuration	Single
Transistor Polarity	PNP
Typical Input Resistor	10 kOhms
Typical Resistor Ratio	1
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SSM-3
DC Collector/Base Gain hfe Min	50
Maximum Operating Frequency	200 MHz
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA
Pd-功率耗散 Pd - Power Dissipation	100 mW
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	Reel
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	10 V
最小工作温度 Minimum Operating Temperature	- 55 C
工作温度范围 Operating Temperature Range	- 55 C to + 150 C
工厂包装数量 Factory Pack Quantity	3000

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RN2101∼RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2101, RN2102, RN2103

RN2104, RN2105, RN2106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1101 to RN1106

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

SSM

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101 to 2106

RN2101 to 2104

RN2105, 2106

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

100

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1990-12

2014-03-01

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