VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt
®
FEATURES
• State of the art low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION
State of the art, ultralow V
F
, soft-switching ultrafast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-ETL1506-M3
VS-ETL1506FP-M3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220FP
15 A
600 V
0.85 V
60 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 157 °C
T
C
= 120 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
200
-65 to +175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
0.99
0.85
0.01
6
12
8
MAX.
-
1.07
0.91
15
100
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 08-Jul-15
Document Number: 93531
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
60
185
210
290
20
26
2.2
4.0
MAX.
110
270
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6
(5)
TYP.
-
1.2
3.7
-
0.5
2
0.07
-
MAX.
175
1.4
4.3
70
-
-
-
12
(10)
ETL1506
ETL1506FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
Revision: 08-Jul-15
Document Number: 93531
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com
Vishay Semiconductors
100
175°
C
10
100
Reverse Current - I
R
(µA)
150°
C
1
0.1
0.01
0.001
0.0001
100
200
300
400
500
600
125°
C
100°
C
75°
C
50°
C
25°
C
Instantaneous Forward Current - I
F
(A)
Tj = 175°
C
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 150°
C
Junction Capacitance - C
T
(pF)
100
Tj = 25°
C
10
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0
100
200
300
400
500
600
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 08-Jul-15
Document Number: 93531
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com
Vishay Semiconductors
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
160
140
120
100
80
60
DC
170
DC
160
150
140
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
RMS Limit
15
10
5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0
0
4
8
12
16
20
24
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 08-Jul-15
Document Number: 93531
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com
400
6
Vishay Semiconductors
350
5
If = 15 A, 125°
C
300
If = 15 A, 125°
C
4
Qrr ( µC )
trr ( ns )
250
3
If = 15 A, 25°
C
2
200
If = 15 A, 25°
C
150
typical value
100
100
1000
1
typical value
0
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
V
R
= 200 V
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 08-Jul-15
Document Number: 93531
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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