Gate Drivers
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Maxim(美信半导体) |
| 零件包装代码 | QLCC |
| 包装说明 | CERAMIC, QCC-20 |
| 针数 | 20 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 高边驱动器 | NO |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | S-CQCC-N20 |
| 湿度敏感等级 | 1 |
| 功能数量 | 2 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 标称输出峰值电流 | 1.5 A |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC20,.35SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度(摄氏度) | 240 |
| 电源 | 4.5/18 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B |
| 最大供电电压 | 18 V |
| 最小供电电压 | 4.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 20 |
| 断开时间 | 0.06 µs |
| 接通时间 | 0.12 µs |
| Base Number Matches | 1 |

| 5962-88503032C | 5962-8850303PA | 5962-8850301PA | 5962-88503022C | 5962-88503012C | |
|---|---|---|---|---|---|
| 描述 | Gate Drivers | Gate Drivers Dual MOSFET Driver | Gate Drivers Dual MOSFET Driver | Gate Drivers DUAL MOSFET DRIVER | Gate Drivers DUAL MOSFET DRIVER |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | QLCC | DIP | DIP | QLCC | QLCC |
| 包装说明 | CERAMIC, QCC-20 | CERAMIC, DIP-8 | DIP, DIP8,.3 | CERAMIC, QCC-20 | CERAMIC, QCC-20 |
| 针数 | 20 | 8 | 8 | 20 | 20 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| 高边驱动器 | NO | NO | NO | NO | NO |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | S-CQCC-N20 | R-GDIP-T8 | R-GDIP-T8 | S-CQCC-N20 | S-CQCC-N20 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 20 | 8 | 8 | 20 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 标称输出峰值电流 | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN | DIP | DIP | QCCN | QCCN |
| 封装等效代码 | LCC20,.35SQ | DIP8,.3 | DIP8,.3 | LCC20,.35SQ | LCC20,.35SQ |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度(摄氏度) | 240 | 240 | 240 | 240 | 240 |
| 电源 | 4.5/18 V | 4.5/18 V | 4.5/18 V | 4.5/18 V | 4.5/18 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B |
| 最大供电电压 | 18 V | 18 V | 18 V | 18 V | 18 V |
| 最小供电电压 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 表面贴装 | YES | NO | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 |
| 断开时间 | 0.06 µs | 0.06 µs | 0.06 µs | 0.06 µs | 0.06 µs |
| 接通时间 | 0.12 µs | 0.12 µs | 0.12 µs | 0.12 µs | 0.12 µs |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 厂商名称 | Maxim(美信半导体) | Maxim(美信半导体) | - | Maxim(美信半导体) | Maxim(美信半导体) |
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