Freescale Semiconductor
Technical Data
Document Number: MRF6P18190H
Rev. 3, 12/2010
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 2000 mA,
P
out
= 44 Watts Avg., f = 1867.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 190 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
MRF6P18190HR6
1805-
-1880 MHz, 44 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 76°C, 44 W CW
Symbol
R
θJC
Value
(2,3)
0.27
0.30
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
MRF6P18190HR6
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistor
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 2000 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.21
3
4
—
Vdc
Vdc
Vdc
Dynamic Characteristics
(2,3)
C
rss
—
1.5
—
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2000 mA, P
out
= 44 W Avg., f1 = 1867.5 MHz, f2 =
1877.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
14.5
25.5
—
—
—
15.9
27.5
--37
--41
--12
17.5
—
--35
--38
--9
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
MRF6P18190HR6
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
B1
V
BIAS
+
C7
R1
C6
+
C5
C4
B2
R2
Z2
RF
INPUT
Z1
C1
Z3
C8
Z13
B3
V
BIAS
+
C13
R3
C12
+
C11
C10
B4
R4
Z1
Z2
Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
0.700″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
2.112″ x 0.067″ Microstrip
0.174″ x 0.067″ Microstrip
0.382″ x 0.250″ Microstrip
0.036″ x 0.764″ Microstrip
0.178″ x 0.764″ Microstrip
0.689″ x 0.073″ Microstrip
0.111″ x 0.764″ Microstrip
0.124″ x 0.856″ Microstrip
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28
Z29
Z30
Z31
PCB
C9
C23
C24
C25
C26
Z19
+
C27
C2
R5
Z5
Z7
Z9
Z11
Z15
Z17
Z21
Z23
Z25
Z27
C22
Z29
DUT
Z4
Z6
Z8
Z10
Z14
C3
Z12
Z16
Z18
Z20
C15
C16
C17
C18
+
C19
+
C20
+ V
SUPPLY
C21
Z22
Z24
Z26
C14
Z28
Z30
RF
Z31 OUTPUT
C30
LIFETIME BUY
+
C28
+
C29
V
SUPPLY
0.477″ x 0.136″ Microstrip
0.289″ x 0.856″ Microstrip
0.215″ x 0.385″ Microstrip
0.118″ x 0.259″ Microstrip
0.108″ x 0.067″ Microstrip
2.163″ x 0.067″ Microstrip
1.397″ x 0.114″ Microstrip
0.492″ x 0.067″ Microstrip
0.207″ x 0.067″ Microstrip
Taconic RF--35, 0.030″,
ε
r
= 3.5
Figure 1. MRF6P18190H Test Circuit Schematic
Table 5. MRF6P18190H Test Circuit Component Designations and Values
Part
Description
Short RF Beads
0.6--4.5 pF Variable Capacitor
5.6 pF Chip Capacitors
7.5 pF Chip Capacitors
1K pF Chip Capacitors
1
μF,
50 V Tantalum Capacitors
0.1
μF
Chip Capacitors
100
μF,
50 V Electrolytic Capacitors, Radial
6.8 pF Chip Capacitors
0.56
μF
Chip Capacitors
22
μF,
35 V Tantalum Capacitors
470
μF,
63 V Electrolytic Capacitors, Radial
0.4--2.5 pF Variable Capacitor
1 kΩ, 1/4 W Chip Resistors
12
Ω,
1/4 W Chip Resistors
560
Ω,
1/4 W Chip Resistor
Part Number
2743019447
27271SL
ATC100B5R6CT500XT
ATC100B7R5CT500XT
ATC100B102JT50XT
T491C105K050AT
CDR33BX104AKTS
EEEFK1H101P
ATC100B6R8GT500XT
C1825C564J5RAC
T491X226K035AT
477KXM063M
27283PC
CRCW12061001FKEA
CRCW120612R0FKEA
CRCW12065600FKEA
Manufacturer
Fair--Rite
Johanson Components
ATC
ATC
ATC
Kemet
Kemet
Panasonic
ATC
Kemet
Kemet
Illinois Capacitor
Johanson Components
Vishay
Vishay
Vishay
B1, B2, B3, B4
C1
C2, C8, C14, C22
C3, C9
C4, C10, C18, C26
C5, C11
C6, C12, C17, C25
C7, C13
C15, C23
C16, C24
C19, C20, C27, C28
C21, C29
C30
R1, R3
R2, R4
R5
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MRF6P18190
Rev. 2
--
+
C7
R1 C6
C5
C4
C15
C3
R2
B1
B2
C2
CUT OUT AREA
C14
C16
C19
C17 C18
--
C21
+
C20
C30
R5
C1
C8
C22
LIFETIME BUY
R4
B3 B4
C9
C27
C24
C25 C26
C28
+
+
C13
R3 C12
C11
C10
C23
--
--
C29
Figure 2. MRF6P18190H Test Circuit Component Layout
MRF6P18190HR6
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
16.5
16.4
16.3
V
DD
= 28 Vdc
P
out
= 44 W (Avg.)
16.2
I
DQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
16.1
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
G
16
15.9
15.8
15.7
15.6
15.5
1760
1780
1800
1820
1840
IRL
1860
1880
1900
f, FREQUENCY (MHz)
ACPR
η
D
28.2
27.8
27.6
27.4
IM3
--34
--36
--38
--40
--42
--44
1920
η
D
, DRAIN
EFFICIENCY (%)
ps
IM3 (dBc), ACPR (dBc)
--8
--10
--12
--14
--16
--18
LIFETIME BUY
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 44 Watts
15.8
15.7
15.6
G
ps
, POWER GAIN (dB)
15.5
15.4
15.3
15.2
15.1
15
1760
1780
1800
1820
1840
1860
1880
IRL
η
D
V
DD
= 28 Vdc, P
out
= 88 W (Avg.)
I
DQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
40.4
G
ps
40
39.6
39.2
IM3
--24
--26
--28
ACPR --30
1900
--32
1920
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--8
--10
--12
--14
--16
--18
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 88 Watts
17.5
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2600 mA
2300 mA
2000 mA
1700 mA
--30
--35
I
DQ
= 2600 mA
--40
--45
2300 mA
--50
1400 mA
--55
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1700 mA
2000 mA
V
DD
= 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
G
ps
, POWER GAIN (dB)
16.5
16
15.5
15
14.5
14
13.5
0.1
1400 mA
V
DD
= 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, Two--Tone
Measurements, 10 MHz Tone Spacing
1
10
300
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
28
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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