IRGP4263PbF
IRGP4263-EPbF
Insulated Gate Bipolar Transistor
V
CES
= 650V
I
C
= 60A, T
C
=100°C
t
SC
5.5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 48A
G
E
C
n-channel
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
Gate
C
G
IRGP4263PbF
TO247AC
C
Collector
E
G
C
E
IRGP4263-EPbF
TO-247AD
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE (ON)
temperature coefficient
5.5µs short circuit SOA
Lead-free, RoHS compliant
Base part number
IRG7P4263PbF
IRG7P4263-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R
JC
(IGBT)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
© 2014 International Rectifier
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Orderable Part Number
IRGP4263PbF
IRGP4263-EPbF
Standard Pack
Form
Quantity
Tube
25
Tube
25
Max.
650
90
60
192
192
±20
300
150
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.5
–––
–––
Units
°C/W
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August 21, 2014
IRGP4263PbF/IRGP4263-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
gfe
I
CES
I
GES
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Min.
650
—
—
—
5.5
—
—
—
—
—
Typ.
—
505
1.7
2.1
—
-23
31
1.0
700
—
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
2.1
V
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
7.7
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.4mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 48A, PW = 20µs
25
µA V
GE
= 0V, V
CE
= 650V
—
V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
±100
nA V
GE
= ±20V
Max Units
Conditions
150
I
C
= 48A
50
nC V
GE
= 15V
V
CC
= 600V
60
2.6
1.9
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
4.5
R
G
= 10, L = 210µH, T
J
= 25°C
90
Energy losses include tail & diode
80
ns reverse recovery
160
50
—
—
—
—
—
—
—
—
—
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10, L = 210µH, T
J
= 175°C
Energy losses include tail & diode
ns reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
V
CC
= 520V, Vp
≤
650V
Rg = 10, V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
650V
Rg = 10, V
GE
= +15V to 0V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Q
g
Total Gate Charge (turn-on)
—
100
Q
ge
Gate-to-Emitter Charge (turn-on)
—
30
Gate-to-Collector Charge (turn-on)
—
40
Q
gc
E
on
Turn-On Switching Loss
—
1.7
E
off
Turn-Off Switching Loss
1.0
E
total
Total Switching Loss
2.7
t
d(on)
Turn-On delay time
—
70
t
r
Rise time
—
60
t
d(off)
Turn-Off delay time
—
140
t
f
Fall time
—
30
E
on
Turn-On Switching Loss
—
2.9
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
—
—
—
—
—
—
—
1.4
4.3
55
60
145
65
3000
150
80
pF
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 50µH, R
G
= 10.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2014 International Rectifier
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August 21, 2014
IRGP4263PbF/IRGP4263-EPbF
110
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 150W
90
Load Current ( A )
70
50
Square Wave:
V
CC
I
30
Diode as specified
10
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
100
(Load Current = I
RMS
of fundamental)
350
300
250
80
60
Ptot (W)
IC (A)
200
150
100
40
20
50
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
IC, Collector-to -Emitter Current (A)
OPERATION IN THIS AREA
LIMITED BY V CE(on)
Fig. 3
- Power Dissipation vs.
Case Temperature
1000
100
1msec
10
10msec
IC (A)
100µsec
100
1
10
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
DC
0.01
100
1000
VCE , Collector-to-Emitter Voltage (V)
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
175°C, V
GE
=15V
3
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© 2014 International Rectifier
Fig.
5- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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August 21, 2014
200
180
160
140
ICE (A)
IRGP4263PbF/IRGP4263-EPbF
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
180
160
140
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
80
60
40
20
0
0
1
2
3
4
5
6
120
100
80
60
40
20
0
7
8
9
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
200
180
160
140
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
8
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VCE (V)
6
ICE = 24A
ICE = 48A
ICE = 96A
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
4
2
0
8
10
12
14
V GE (V)
16
18
20
V CE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
8
8
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
6
ICE = 24A
ICE = 48A
ICE = 96A
VCE (V)
VCE (V)
6
ICE = 24A
ICE = 48A
ICE = 96A
4
4
2
2
0
8
10
12
14
V GE (V)
16
18
20
0
8
10
12
14
V GE (V)
16
18
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
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August 21, 2014
200
IC, Collector-to-Emitter Current (A)
IRGP4263PbF/IRGP4263-EPbF
10
9
TJ = 25°C
TJ = 175°C
Energy (mJ)
180
160
140
120
100
80
60
40
20
0
4
6
8
7
6
5
4
3
2
1
0
EOFF
EON
8
10
12
14
16
18
20
0 10 20 30 40 50 60 70 80 90 100 110
IC (A)
V GE, Gate-to-Emitter Voltage (V)
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
8
7
Swiching Time (ns)
6
Energy (mJ)
tdOFF
100
tF
tdON
tR
10
0
10 20 30 40 50 60 70 80 90 100
IC (A)
EON
5
4
3
2
1
0
0
20
40
60
RG ()
80
100
120
EOFF
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. RG
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, I
CE
= 48A; VGE = 15V
35
30
280
240
200
Current (A)
1000
Swiching Time (ns)
Tsc
Isc
tdOFF
100
tF
Time (µs)
tdON
tR
25
20
15
160
120
80
40
10
10
1
0
20
40
60
80
100
RG (
)
5
8
10
12
14
16
18
VGE (V)
Fig. 16
- Typ. Switching Time vs. RG
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- V
CE
vs. Short Circuit Time
V
cc
= 400V; T
C
= 150°C
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August 21, 2014
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