Si3433CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 20
± 8.0
- 6.0
a
- 6.0
a
- 5.2
b, c
- 4.2
b, c
- 20
- 2.7
- 1.3
b, c
3.3
2.1
1.6
b, c
1.0
b, c
- 55 to 150
Unit
V
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
25
Maximum
80
38
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
www.vishay.com
1
New Product
Si3433CDV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.2 A
- 0.8
45
40
23
22
T
C
= 25 °C
- 2.7
- 20
- 1.2
70
60
A
V
ns
nC
ns
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 5.2 A
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.2 A, V
GEN
= - 8 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.2 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 5.2 A
V
GS
=
- 2.5 V, I
D
= - 4.8 A
V
GS
=
- 1.8 V, I
D
= - 2 A
V
DS
= - 6 V, I
D
= - 5.2 A
- 20
0.031
0.037
0.046
20
1300
210
180
30
18
2.1
4.8
6
20
22
50
20
10
12
50
15
30
35
75
30
15
25
75
25
ns
Ω
45
27
nC
pF
0.038
0.046
0.060
S
Ω
- 0.4
- 20
- 18
3
- 1.0
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
New Product
Si3433CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 5 thru 2
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
12
V
GS
= 1.5
V
8
6
4
T
C
= 25 °C
2
4
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
2500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
2000
0.06
V
GS
= 1.8
V
V
GS
= 2.5
V
1500
C
iss
0.04
1000
0.02
V
GS
= 4.5
V
500
C
rss
C
oss
0.00
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 5.2 A
V
GS
- Gate-to-Source
Voltage
(V)
6
V
DS
= 10
V
V
DS
= 16
V
4
1.5
1.4
Capacitance
V
GS
= 4.5
V;
2.5
V;
I
D
= 5.2 A
R
DS(on)
- On-Resistance
1.3
(Normalized)
1.2
1.1
1.0
0.9
0.8
0
0
5
10
15
20
25
30
0.7
- 50
V
GS
= 1.8
V;
I
D
= 2 A
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
www.vishay.com
3
New Product
Si3433CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.10
0.09
I
D
= - 5.2 A
R
DS(on)
- On-Resistance (Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
SD
- Source-to-Drain
Voltage
(V)
T
J
= 125 °C
T
J
= 25 °C
I
S
- Source Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.9
0.8
0.7
V
GS(th)
(V)
0.6
I
D
= 250
µA
0.5
0.4
0.3
0.2
- 50
Power (W)
30
40
On-Resistance vs. Gate-to-Source Voltage
20
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1 s, 10 s
DC
Single Pulse Power
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
New Product
Si3433CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
4
8
3
I
D
- Drain Current (A)
6
Power (W)
Package Limited
2
4
1
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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