IR MOSFET
StrongIRFET™
IRF60R217
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
D
Drain
V
DSS
R
DS(on)
typ.
G
S
D
60V
8.0m
9.9m
58A
max
I
D
D
S
G
D-Pak
IRF60R217
S
Source
Base part number
IRF60R217
Package Type
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Orderable Part Number
IRF60R217
RDS(on), Drain-to -Source On Resistance (m
)
30
ID = 35A
25
20
15
10
5
0
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
ID, Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
2016-01-05
Absolute Maximum Rating
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Max.
58
41
217
83
0.56
± 20
IRF60R217
Units
A
W
W/°C
V
°C
-55 to + 175
300
85
124
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.8
50
110
mJ
A
mJ
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.047
8.0
10
–––
–––
–––
–––
–––
2.0
–––
9.9
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 35A
m
V
GS
= 6.0V, I
D
= 18A
V
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 60V, V
GS
= 0V
µA
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.14mH, R
G
= 50, I
AS
= 35A, V
GS
=10V.
I
SD
35A, di/dt
862A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 16A, V
GS
=10V.
2
2016-01-05
IRF60R217
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
40
10
12
28
7.6
29
21
12
2170
210
130
228
283
Typ.
–––
–––
–––
18
27
30
26
33
1.7
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 35A
66
I
D
= 35A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
=30V
–––
I
D
= 35A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
58
A
217
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 35A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 35A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 35A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
2016-01-05
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRF60R217
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
60µs
PULSE WI DTH
1
0.1
1
Tj = 25°C
10
100
1
0.1
60µs
PULSE WIDTH
Tj = 175°C
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 35A
VGS = 10V
2.0
100
T J = 175°C
10
1.5
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14
12
10
8
6
4
2
0
ID= 35A
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 8.
Typical Gate Charge vs. Drain-to-Source Voltage
2016-01-05
1000
T J = 175°C
100
T J = 25°C
10
1000
IRF60R217
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
1
10msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.01
10
100
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.4
75
Id = 1.0mA
0.3
0.3
Energy (µJ)
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
70
0.2
0.2
0.1
0.1
65
60
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
24
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
20
16
12
8
4
0
20
40
60
80
100 120 140 160
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
2016-01-05
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