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NSVT45010MW6T1G

产品描述MOSFET MOSFET BVDSS: 8V-24V
产品类别分立半导体    晶体管   
文件大小61KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSVT45010MW6T1G概述

MOSFET MOSFET BVDSS: 8V-24V

NSVT45010MW6T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
包装说明SMALL OUTLINE, R-PDSO-G6
制造商包装代码419B-02
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time8 weeks
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压45 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)220
JESD-30 代码R-PDSO-G6
JESD-609代码e3
湿度敏感等级1
元件数量2
端子数量6
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
参考标准AEC-Q101
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
Base Number Matches1

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NST45010MW6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultra−small SOT−363 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Complementary NPN equivalent NST45011MW6T1G is available.
Features
http://onsemi.com
(3)
(2)
(1)
Current Gain Matching to 10%
Base−Emitter Voltage Matched to
2 mV
Drop−In Replacement for Standard Device
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−100
Unit
V
V
V
mAdc
Q
1
Q
2
(4)
(5)
(6)
6
1
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4F MG
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
Unit
mW
4F = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
mW/°C
°C/W
°C
Device
NST45010MW6T1G
Package
SOT−363
(Pb−Free)
Shipping
3000 /
Tape & Reel
3000 /
Tape & Reel
NSVT45010MW6T1G SOT−363
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 3
Publication Order Number:
NST45010MW6/D

 
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