Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, T
C
= 135°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
20
40
I
FRM
I
FSM
I
RRM
T
stg
T
J
dv/dt
40
150
1.0
−65 to +175
−65 to +150
1,000
A
A
A
°C
°C
V/ms
Value
15
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
(Per Diode)
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
R
qJC
R
qJA
Max
1.3
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(i
F
= 20 A, T
j
= 125°C)
(i
F
= 40 A, Tj = 125°C)
(i
F
= 20 A, Tj = 25°C)
(i
F
= 40 A, Tj = 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
Symbol
v
F
−
−
−
−
i
R
−
−
300
0.8
600
10
0.31
0.45
0.41
0.51
0.34
0.50
0.43
0.54
mA
Min
Typical
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
100
10
125°C
1.0
150°C
100°C
75°C
10
125°C
150°C
100°C
75°C
1.0
25°C
25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBR4015CTLG
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1.0
I
R
, REVERSE CURRENT (A)
125°C
0.1
100°C
75°C
0.01
34
32
28
24
20
16
12
8.0
4.0
0
125
130
135
140
145
150
155
T
C
, CASE TEMPERATURE (°C)
Square Wave
dc
0.001
25°C
0.0001
0
2.0
4.0
6.0
8.0
10
12
14
16
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
P
F(AV)
, AVERAGE POWER DISSIPATION (W)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
30
28
26
24
dc
22
20
18
16
14 Square Wave
12
10
8.0
6.0
4.0 R
qJA
= 70°C/W
2.0
No Heatsink
0
0
25
50
14
12
10
Figure 4. Current Derating, Case, Per Leg
T
J
= 150°C
R
qJA
= 16°C/W
Square Wave
8.0
6.0
4.0
2.0
0
dc
dc
Square Wave
75
100
125
150
175
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient, Per Leg
Figure 6. Forward Power Dissipation
7000
6000
C, CAPACITANCE (pF)
5000
4000
3000
2000
1000
0
0
2.0
4.0
6.0
8.0
10
12
14
16
V
R
, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
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3
MBR4015CTLG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 6:
PIN 1.
2.
3.
4.
ON Semiconductor and the
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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