Si4465DY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–8
r
DS(on)
(W)
0.009 @ V
GS
= –4.5 V
0.011 @ V
GS
= –2.5 V
0.016 @ V
GS
= –1.8 V
I
D
(A)
–14
–12
–10
S
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4465DY-T1
Si4465DY-T1–E3 (Lead (Pb)–free)
8
7
6
5
D
D
D
D
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–8
"8
–14
–11
–40
–2.1
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v10
sec.
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
www.vishay.com
t
v
10 sec
Steady State
R
thJA
80
Symbol
Typical
Maximum
50
Unit
_C/W
1
Si4465DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –8 V, V
GS
= 0 V
V
DS
= –8 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –14 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –12 A
V
GS
= –1.8 V, I
D
= –10 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –14 A
I
S
= –2.1 A, V
GS
= 0 V
–20
0.007
0.009
0.012
60
0.7
–1.2
0.009
0.011
0.016
S
V
W
–0.45
–1.0
"100
–1
–5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –2.1 A, di/dt = 100 A/ms
V
DD
= –4 V, R
L
= 4
W
4
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –4 V, V
GS
= –4.5 V, I
D
= –14 A
80
15
9
3.3
45
55
380
190
80
5
90
110
760
380
120
ns
W
120
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70830
S-51472—Rev. C, 01-Aug-05
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 5 thru 2 V
32
I
D
– Drain Current (A)
I
D
– Drain Current (A)
32
40
Transfer Characteristics
24
1.5 V
24
16
16
T
C
= 125_C
8
25_C
–55_C
8
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
14000
12000
r
DS(on)
– On-Resistance (
W
)
C – Capacitance (pF)
0.03
Capacitance
C
iss
10000
8000
6000
4000
2000
C
rss
0
0
8
16
24
32
40
0
2
4
6
8
C
oss
0.02
V
GS
= 1.8 V
0.01
V
GS
= 2.5 V
V
GS
= 4.5 V
0.00
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 4 V
I
D
= 14 A
r
DS(on)
– On-Resistance
(Normalized)
1.4
On-Resistance vs. Junction Temperature
4
1.3
V
GS
= 4.5 V
I
D
= 14 A
1.2
3
1.1
2
1.0
1
0.9
0
0
20
40
60
80
0.8
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
T
J
– Junction Temperature (_C)
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3
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.04
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
0.03
10
T
J
= 150_C
0.02
T
J
= 25_C
0.01
I
D
= 14 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
40
50
Single Pulse Power
0.3
V
GS(th)
Variance (V)
0.2
Power (W)
30
0.1
20
0.0
10
–0.1
–0.2
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
2. Per Unit Base = R
thJA
= 80_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70830
S-51472—Rev. C, 01-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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