Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
V
RSM
V
1200
V
RRM
V
1200
Type
MEA75-12 DA
1
2
3
MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
V
RRM
= 1200 V
I
FAV
= 75 A
t
rr
= 250 ns
TO-240 AA
1
3
2
MEK 75-12 DA
1
2
3
MEE 75-12 DA
1
2
3
Symbol
I
FRMS
I
FAV
I
FRM
I
FSM
Test Conditions
T
case
= 75
°C
T
case
= 75
°C;
rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
107
75
TBD
1200
1300
1080
1170
7200
7100
5800
5700
-40...+150
-40...+125
110
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
V~
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
q
q
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
stg
T
Hmax
P
tot
V
ISOL
M
d
d
S
d
A
a
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 100 A;
I
F
= 300 A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
T
VJ
T
VJ
T
VJ
= 125°C
= 25°C
= 125°C
= 25°C
T
case
= 25°C
50/60 Hz, RMS t = 1 min
t=1s
I
ISOL
≤
1 mA
Mounting torque (M5)
Terminal connection torque (M5)
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
280
3000
3600
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
q
q
q
q
q
2.50-4/22-35 Nm/lb.in.
2.50-4/22-35 Nm/lb.in.
12.7
9.6
50
90
mm
mm
m/s
2
g
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
q
q
q
q
Characteristic Values (per diode)
typ.
max.
2
0.5
34
1.85
2.17
2.58
2.64
1.48
3.65
0.550
0.450
T
VJ
= 100°C
T
VJ
= 25°C
T
VJ
= 100°C
250
300
22
33
mA
mA
mA
V
V
V
V
V
mΩ
K/W
K/W
ns
A
A
Dimensions in mm (1 mm = 0.0394")
V
F
For power-loss calculations only
DC current
DC current
I
F
= 150 A
V
R
= 600 V
-di/dt = 200 A/µs
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
D6 - 5
015
MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
200
A
175
I
F
150
125
100
75
50
25
0
0
1
V
2
V
F
3
0
10
100
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
4
40
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
= 100°C
µC
V
R
= 600V
10
100
I
F
= 150A
I
F
= 100A
I
F
= 70A
T
VJ
= 100°C
A
V = 600V
R
Q
r
8
I
RM
80
I
F
= 150A
I
F
= 100A
I
F
= 70A
6
60
2
20
Fig. 1 Forward current I
F
versus
voltage drop V
F
per leg
1.4
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
350
ns
T
VJ
= 100°C
V
R
= 600V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
100
A
80
V
FR
60
t
fr
V
FR
2.0
µs
1.6
t
fr
1.2
K
f
1.0
I
RM
Q
r
t
rr
300
I
F
= 150A
I
F
= 100A
I
F
= 70A
1.2
250
0.8
40
0.8
0.6
200
20
T
VJ
= 100°C
I
F
= 150A
0.4
0.4
0
50
100
T
VJ
°C 150
150
0
200
400
600 A/µs 1000
800
-di
F
/dt
0
0
200
400
600 800
di
F
/dt
0.0
1000
A/µs
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
0.6
K/W
0.5
0.4
Z
thJH
0.3
0.2
0.1
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJH
calculation:
i
1
2
3
4
R
thi
(K/W)
0.037
0.138
0.093
0.282
t
i
(s)
0.002
0.134
0.25
0.274
75-12 DA
0.0
0.001
0.01
0.1
1s
Fig. 7 Transient thermal impedance junction to heatsink
t
10
D6 - 6
© 2000 IXYS All rights reserved
016
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