d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 63304
S11-1660-Rev. A, 15-Aug-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A, V
GS
½0
V
0.75
19
8.5
10
9
T
C
= 25 °C
27
50
1.2
35
17
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
930
370
95
16.5
7.7
2.7
3.3
1.4
17
12
14
8
9
9
16
7
2.8
34
24
28
16
18
18
30
14
ns
25
11.5
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 10 A
V
GS
½4.5
V, I
D
= 7 A
V
DS
= 15 V, I
D
= 10 A
30
0.0047
0.0069
50
0.0058
0.0084
1.4
20
19
- 5.3
2.5
± 100
1
5
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63304
S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
8
10
I
D
- Drain Current (A)
30
6
T
C
= 25
°C
4
20
10
V
GS
= 3 V
0
0.0
V
GS
= 2 V
2.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.009
Transfer Characteristics
1500
0.008
R
DS(on)
- On-Resistance (Ω)
1200
C - Capacitance (pF)
V
GS
= 4.5 V
C
iss
900
0.007
0.006
600
C
oss
300
0.005
V
GS
= 10 V
0.004
0
10
20
30
40
50
I
D
- Drain Current (A)
C
rss
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 15 V
1.4
1.6
I
D
= 10 A
Capacitance
V
GS
= 10 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0.0
3.4
6.8
10.2
13.6
Q - Total Gate Charge (nC)
g
17.0
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63304
S11-1660-Rev. A, 15-Aug-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
10
I
S
- Source Current (A)
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.024
I
D
= 10 A
0.018
0.1
0.012
T
J
= 125
°C
0.006
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
- Variance (V)
80
0
I
D
= 5 mA
Power (W)
60
- 0.2
40
- 0.4
I
D
= 250 μA
- 0.6
20
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
Single Pulse Power (Junction-to-Ambient)
100 μs
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
C
= 25
°C
Single Pulse
0.01
0.01
0.1
1
1s
10 s
DC
BVDSS Limited
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63304
S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
50
I
D
- Drain Current (A)
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
40
2.0
32
1.6
Power (W)
16
Power (W)
0
25
50
75
100
125
150
24
1.2
0.8
8
0.4
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63304
S11-1660-Rev. A, 15-Aug-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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