MUSES8832
Rail-to-Rail Output, High Quality Audio,
Dual Operational Amplifier
■
GENERAL DESCRIPTION
The MUSES8832 is a Rail-to-Rail output High quality audio operational
amplifier, which is optimized for high-end audio and portable audio
applications.
The MUSES8832 features 2.1nV/Hz low noise, 10MHz wide gain
bandwidth, 0.0009% low distortion, 600Ω drive capability, -40°C to +125°C
operating temperature range, and various reliabilities and conveniences
are improved.
It is the best for audio preamplifiers, active filters, microphone amplifiers,
and line amplifiers with excellent sound.
■
PACKAGE OUTLINE
MUSES8832E
(SOP8
JEDEC 150 mil
(EMP8))
MUSES8832VA3
(SSOP8-A3)
MUSES8832KW1
(DFN8-W1 (ESON8-W1))
■
FEATURES
●
Operating Voltage
●
Low Noise
●
Output Current
●
GBW
●
Low Distortion
●
Slew Rate
●
Bipolar Technology
●
Package Outline
+2.7V to +14V
±1.35V to ±7.0V
2.1nV/√Hz typ. at f=1kHz
0.3μVrms typ. (20Hz to 20kHz)
32mA typ. (Capability of driving 600Ω loads)
10MHz typ.
0.0009% typ. at V+=+5V, Vo=1.3Vrms
1V/µs typ.
■
PIN CONFIGLATION
SOP8
JEDEC 150 mil
, SSOP8-A3
1
2
3
4
A
B
8
7
6
5
SOP8
JEDEC 150 mil
, SSOP8-A3
DFN8-W1 (ESON8-W1) (3.0mm x 3.0mm)
●
Operating Temperature Range -40 to +125°C
■
APPLICATIONS
●
Portable Audio
●
Home Audio
●
PC Audio
●
Car Audio
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
DFN8-W1 (ESON8-W1)
Bottom View
Top View
1
2
3
4
A
B
8
7
6
5
8
7
6
5
Exposed
Pad
1
2
3
4
About Exposed Pad
Connect the Exposed Pad on the GND.
I/V
Digital
Input
DA
Converter
I/V
LPF
Buff
Analog
Output
DAC Output I/V converter + LPF circuit
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.9.0
-1-
MUSES8832
■
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Supply Voltage
Input Voltage
Differential Input Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
+
(V
+
/V
-
)
V
IN
V
ID
P
D
T
opr
T
stg
RATING
+15 (7.5)
+15
(Note1)
15
SOP8
JEDEC 150 mil
: 900
SSOP8-A3: 650
(Note2)
DFN8-W1:650
(Note3)
:2100
(Note4)
-40 to +125
-65 to +150
UNIT
V
V
V
mW
°C
°C
(Note1) For supply Voltages less than +15 V, the maximum input voltage is equal to the Supply Voltage.
(Note2) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 2layers, FR-4) mounting.
(Note3) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 2layers, FR-4) mounting. The PAD connecting to GND in the center part on the back
(Note4) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 4layers, FR-4, Applying a thermal via hole to a board based on JEDEC standard JESD51-5)
mounting. The PAD connecting to GND in the center part on the back
■
RECOMMENDED OPERATING CONDITION
(Ta=25°C)
PARAMETER
Supply Voltage
SYMBOL
V
+
V
+
/V
-
TEST CONDITION
MIN.
+2.7
1.35
TYP.
-
-
MAX.
+14.0
7.0
UNIT
V
V
■
ELECTRIC CHARACTERISTICS
V
+
= +5V, V
-
=0V, Ta=25°C, R
L
to V
+
/2, unless otherwise specified
PARAMETER
Supply Current
Power Dissipation
Input Offset Voltage
Input Bias Current
Input Offset Current
Open-Loop Voltage Gain
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage 1
Maximum Output Voltage 2
Output Source Current
Output Sink Current
Gain Bandwidth Product
Slew Rate
Total Harmonic Distortion + Noise
Channel Separation
Input Noise Voltage1
Input Noise Voltage2
SYMBOL
I
CC
P
D
V
IO
I
B
I
IO
A
V
V
ICM
CMR
SVR
V
OH1
V
OL1
V
OH2
V
OL2
I
SOURCE
I
SINK
GBW
SR
THD+N
CS
e
n
V
n
TEST CONDITION
No Signal, R
L
=∞
No Signal
Rs=50
MIN.
-
-
-
-
-
TYP.
7.5
42.5
0.1
4
100
115
-
110
105
4.95
0.05
4.9
0.1
32
20
10
1
0.0009
140
2.1
0.30
MAX.
10
60
0.5
6.5
500
-
3.7
-
-
-
0.1
-
0.2
-
-
-
-
-
-
-
-
UNIT
mA
mW
mV
μA
nA
dB
V
dB
dB
V
V
V
V
mA
mA
MHz
V/μs
%
dB
nV/√Hz
μVrms
R
L
=10k to V+/2, V
O
=0.5 to 4.5V
CMR≥90dB
R
S
=50Ω
R
S
=50Ω
R
L
=10kΩ to 0V
R
L
=10kΩ to 0V
R
L
=600Ω to V /2
R
L
=600Ω to V /2
V
O
=V -0.5V
V
O
=0.5V
f=10kHz
R
L
=2kΩ
Gain=10,V
O
=1.3Vrms,R
L
=2kΩ,f=1kHz
Gain=100, R
S
=1kΩ, R
L
=10kΩ, f=1kHz
f=1kHz
f=20Hz to 20kHz
+
+
+
90
0.5
90
90
4.9
-
4.8
-
10
10
-
-
-
-
-
-
-2-
Ver.9.0
MUSES8832
■
NOTE
1.
The closed gain should be 6dB or higher to prevent the oscillation. Unity gain follower application may cause the
oscillation.
2.
Minimize the load capacitor for the better performance. A large load capacitor CL reduces the frequency response and
causes oscillation or ringing.
3. Be careful to the circuit of high impedance. Input bias current influences an input noise and output offset voltage.
■
POWER DISSIPATION vs. AMBIENT TEMPERATURE
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power
Dissipation P
D
. The dependence of the MUSES8832 P
D
on ambient temperature is shown in Fig 1. The plots are depended on
following two points. The first is P
D
on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W,
which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the P
D
lower than 25ºC to it on
25ºC. The P
D
is shown following formula as a function of the ambient temperature between those points.
Dissipation Power
P
D
=
Tjmax - Ta
ja
[W] (Ta=25ºC to Ta=150ºC)
Where,
ja
is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, P
D
is different in each package.
While, the actual measurement of dissipation power on MUSES8832 is obtained using following equation.
(Actual Dissipation Power) = (Supply Current Icc) X (Supply Voltage V
+
– V-) – (Output Power Po)
The MUSES8832 should be operated in lower than P
D
of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
Fig 1
2500
DFN8-W1 4layers
2000
Power Dissipation Pd [mW]
1500
1000
SOP8
500
SSOP8-A3
DFN8-W1 2layers
0
0
Ver.9.0
50
100
Ambient Temperature Ta [˚C]
150
-3-
MUSES8832
■
PACKAGE OUTLINE (ESON8-W1)
-4-
Ver.9.0
MUSES8832
■
TYPICAL CHARACTERISTICS
(V
-
=0V, V
CM
=V
+
/2, unless otherwise specified)
Voltage Noise Density / Current Noise Density
vs. Frequency
Equivalent Input Noise Voltage [nV/√Hz]
Equivalent Input Noise Current [pA/√Hz]
100
V
+
=5V, R
L
=1kΩ, Ta=25ºC
THD+N vs. Output Voltage
1
V
+
=14V, R
L
=2kΩ, Gain=10, Ta=25ºC
0.1
THD+N [%]
10
Current Noise
0.01
f=20kHz
Voltage Noise
0.001
f=1kHz
f=100Hz
f=20Hz
1
1
10
100
1k
Frequency [Hz]
10k
100k
0.0001
0.01
0.1
1
Output Voltage [Vrms]
10
THD+N vs. Output Voltage
1
V
+
=5V, R
L
=2kΩ, Gain=10, Ta=25ºC
THD+N vs. Output Voltage
1
V
+
=2.7V, R
L
=2kΩ, Gain=10, Ta=25ºC
0.1
THD+N [%]
f=20kHz
0.1
THD+N [%]
0.01
0.01
f=20kHz
f=1kHz
f=100Hz
f=20Hz
0.001
f=1kHz
f=100Hz
f=20Hz
0.001
0.0001
0.01
0.1
1
Output Voltage [Vrms]
10
0.0001
0.01
0.1
1
Output Voltage [Vrms]
10
40dB Voltage Gain/Phase vs. Frequency
60
Gain
V
+
=14V, G
V
=40dB, R
L
=2kΩ, C
L
=10pF
40dB Voltage Gain/Phase vs. Frequency
60
40
Voltage Gain [dB]
20
0
-20
-40
-60
1k
10k
Phase
Gain
C
L
=220pF
V
+
=14V, G
V
=40dB, R
L
=2kΩ, Ta=25ºC
40
Voltage Gain [dB]
20
Phase
Phase [deg]
Ta=-40ºC
Ta=25ºC
Ta=125ºC
0
-20
Ta=-40ºC
0
-60
0
C
L
=10pF
-60
-120
-180
100M
-40
-60
1k
Ta=25ºC
Ta=125ºC
-120
-180
100M
C
L
=220pF
C
L
=470pF
10k
100k
1M
Frequency [Hz]
10M
100k
1M
Frequency [Hz]
10M
Ver.9.0
-5-
Phase [deg]
C
L
=470pF
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