PD - 95521B
IRFR3504ZPbF
IRFU3504ZPbF
Features
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 40V
R
DS(on)
= 9.0mΩ
G
S
I
D
= 42A
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
D-Pak
IRFR3504ZPbF
I-Pak
IRFU3504ZPbF
Absolute Maximum Ratings
Parameter
I
D
@
I
D
@
I
D
@
I
DM
T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
77
54
42
310
90
Units
A
P
D
@T
C
= 25°C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
Single Pulse Avalanche Energy Tested Value
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
0.60
± 20
Ã
h
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
1.66
40
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
09/27/10
IRFR/U3504ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
40
–––
–––
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.032
8.23
–––
–––
–––
–––
–––
–––
30
9.6
12
15
74
30
38
4.5
7.5
1510
340
190
1100
340
460
–––
–––
9.0
4.0
–––
20
250
200
-200
45
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 42A
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 42A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 42A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 42A
R
G
= 15
Ω
V
GS
= 10V
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
18
9.2
42
A
310
1.3
27
14
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 20V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3504ZPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
4.5V
30µs PULSE WIDTH
Tj = 175°C
4.5V
0.1
0.1
1
30µs PULSE WIDTH
Tj = 25°C
10
100
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
60
Gfs, Forward Transconductance (S)
T J = 175°C
50
40
30
20
10
0
0
10
20
30
40
50
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current
(Α)
100.0
T J = 175°C
T J = 25°C
10.0
1.0
T J = 25°C
VDS = 20V
30µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VDS = 10V
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRFR/U3504ZPbF
2500
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID= 42A
VDS= 32V
VDS= 20V
VDS= 8.0V
VGS, Gate-to-Source Voltage (V)
2000
16
C, Capacitance (pF)
Ciss
1500
12
1000
8
500
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 175°C
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3504ZPbF
80
LIMITED BY PACKAGE
60
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 42A
VGS = 10V
ID , Drain Current (A)
1.5
40
1.0
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
2
τ
Ri (°C/W)
τi
(sec)
1.117
0.000536
0.5422
0.004428
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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