PD- 95188A
IRG4PH40UDPbF
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Lead-Free
UltraFast CoPack IGBT
C
V
CES
= 1200V
G
E
V
CE(on) typ.
=
2.43V
@V
GE
= 15V, I
C
= 21A
n-channel
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
1200
41
21
82
82
8.0
130
± 20
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
1.7
40
Units
°C/W
g (oz)
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1
05/27/11
IRG4PH40UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 1200
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
0.43
V
CE(on)
Collector-to-Emitter Saturation Voltage
2.43
2.97
2.47
V
GE(th)
Gate Threshold Voltage
3.0
ΔV
GE(th)
/ΔT
J
Temperature Coeff. of Threshold Voltage
-11
Forward Transconductance
16
24
g
fe
I
CES
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
2.6
2.4
I
GES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 1.0mA
3.1
I
C
= 21A
V
GE
= 15V
V
I
C
= 41A
See Fig. 2, 5
I
C
= 21A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
= 100V, I
C
= 21A
250
µA
V
GE
= 0V, V
CE
= 1200V
5000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
3.3
V
I
C
= 8.0A
See Fig. 13
3.1
I
C
= 8.0A, T
J
= 125°C
±100 n A
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
Typ.
86
13
29
46
35
97
240
1.80
1.93
3.73
42
32
240
510
7.04
13
1800
120
18
63
106
4.5
6.2
140
335
133
85
Max. Units
Conditions
130
I
C
= 21A
20
nC V
CC
= 400V
See Fig. 8
44
V
GE
= 15V
T
J
= 25°C
ns
I
C
= 21A, V
CC
= 800V
150
V
GE
= 15V, R
G
= 10Ω
360
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 18
4.6
T
J
= 150°C,
See Fig. 11, 18
ns
I
C
= 21A, V
CC
= 800V
V
GE
= 15V, R
G
= 10Ω
Energy losses include "tail" and
mJ diode reverse recovery.
nH Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
95
ns
T
J
= 25°C See Fig.
14
I
F
= 8.0A
160
T
J
= 125°C
8.0
A
T
J
= 25°C See Fig.
11
T
J
= 125°C
15
V
R
= 200V
380
nC T
J
= 25°C
See Fig.
880
T
J
= 125°C
16
di/dt = 200A/µs
A/µs T
J
= 25°C
See Fig.
T
J
= 125°C
17
2
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IRG4PH40UDPbF
25
For both:
20
LOAD CURRENT (A)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
35
W
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
10
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 25
o
C
1
V
GE
= 15V
20μs PULSE WIDTH
1
10
1
V
CC
= 50V
5μs PULSE WIDTH
5
6
7
8
9
10
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH40UDPbF
50
4.0
40
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
Maximum DC Collector Current(A)
I
C
= 42 A
3.0
30
I
C
= 21 A
I
C
=10.5 A
2.0
20
10
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40UDPbF
4000
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 21A
C, Capacitance (pF)
3000
16
Cies
2000
12
8
1000
Coes
Cres
4
0
1
10
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
100
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0
Total Switching Losses (mJ)
4.5
Total Switching Losses (mJ)
V
CC
= 800V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 21A
100
R
G
=
10
Ω
Ohm
V
GE
= 15V
V
CC
= 800V
I
C
=
42
A
10
4.0
I
C
=
21
A
I
C
=
10.5
A
3.5
3.0
0
10
20
30
40
50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
G
,
,
Gate Resistance
(
(Ohm)
R Gate Resistance
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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