VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
New INT-A-PAK
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
T(AV)
Type
Package
Circuit
135 A to 160 A
Modules - Thyristor, Standard
INT-A-PAK
Two SCRs doubler circuit, SCR/diode
doubler circuit, positive control,
SCR/diode doubler circuit, negative
control
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
RRM
T
J
Range
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
85 °C
VSK.136..
135
300
3200
3360
51.5
47
515.5
400 to 1600
VSK.142..
140
310
4500
4712
102
92.5
1013
400 to 1600
-40 to 125
VSK.162..
160
355
4870
5100
119
108
1190
400 to 1600
kA
2
s
kA
2
s
V
°C
A
UNITS
A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
VS-VSK.136
VS-VSK.142
VS-VSK.162
08
12
14
16
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
50
I
RRM
/I
DRM
AT 125 °C
mA
Revision: 11-Apr-14
Document Number: 94513
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
VSK.136 VSK.142 VSK.162
135
85
300
3200
3360
2700
2800
51.5
47
36.5
33.3
515.5
0.86
1.05
2.02
1.65
1.57
1.57
140
85
310
4500
4712
3785
3963
102
92.5
71.6
65.4
1013
0.83
1
1.78
1.43
1.55
1.55
200
400
mA
160
85
355
4870
5100
4100
4300
119
108
84
76.7
1190
0.8
0.98
1.67
m
(I >
x I
T(AV)
), T
J
maximum
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
1.38
1.54
1.54
V
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
gd
t
gr
t
q
T
J
= 25 °C
TEST CONDITIONS
Gate current = 1 A, dl
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
VALUES
1
2
50 to 200
μs
UNITS
I
TM
= 300 A, - dl/dt = 15 A/μs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
INS
dV/dt
T
J
= 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
50
3500
1000
UNITS
mA
V
V/μs
Revision: 11-Apr-14
Document Number: 94513
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
t
p
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= T
J
maximum
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
T
J
= - 40 °C
I
GT
T
J
= 25 °C
T
J
= T
J
maximum
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
10
300
mA
A/μs
Anode supply = 6 V,
resistive load; R
a
= 1
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
V
mA
V
UNITS
W
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
Case style
IAP to heatsink
busbar to IAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
0.18
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
-40 to 125
°C
-40 to 150
0.18
0.05
4 to 6
200
7.1
INT-A-PAK
Nm
g
oz.
0.16
K/W
R
CONDUCTION PER JUNCTION
DEVICES
180°
VSK.136
VSK.142
VSK.162
0.007
0.0019
0.0030
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.01
0.0019
0.0031
90°
0.013
0.0020
0.0032
60°
0.0155
0.0020
0.0033
30°
0.017
0.0021
0.0034
180°
0.009
0.0018
0.0029
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.012
0.0022
0.0036
90°
0.014
0.0023
0.0039
60°
0.015
0.0023
0.0041
30°
0.017
0.0020
0.0040
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Apr-14
Document Number: 94513
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
350
M axim um Averag e O n-state Pow er Loss (W )
300
250
200
150
100
50
0
0
50
1 00
C o n d uc tio n P eriod
130
120
110
VSK.136.. Series
RthJC (DC) = 0.18 K/W
Maximum Allowable Case Temperature (°C)
Conduction Angle
100
90
80
70
0
20
40
60
80
100
120
140
DC
180
120
90
60
30
RM S Lim it
30°
60°
90°
120°
180°
VSK .136.. Se ries
Per Junction
T
J
= 12 5°C
1 50
2 00
2 50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
A vera ge O n -sta te C urrent (A)
Fig. 4 - On-State Power Loss Characteristics
130
Maximum Allowable Case Temperature (°C)
120
110
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
VSK.136.. Series
RthJC (DC) = 0.18 K/W
30 0 0
28 0 0
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
1
A t A ny R ate d Lo ad Co nditio n A n d W ith
R ated V
RRM
A pplied Follo w ing Surge .
In itial T
J
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
100
30°
90
80
70
0
50
100
150
200
250
Average On-state Current (A)
60°
90°
120°
180°
DC
VSK.136.. Series
Per Junction
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
250
200
150
100
50
0
0
180
120
90
60
30
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
300
35 0 0
30 0 0
Maxim um No n Repetitive Surge Curre nt
V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial T
J
= 125°C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
RRM
25 0 0
RMS Limit
20 0 0
Conduction Angle
VSK.136.. Series
Per Junction
TJ = 125°C
30
60
90
120
150
15 0 0
VSK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
Pulse Tra in D ura tion (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
450
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
R
th
12
08
0 .0
400
350
300
250
200
150
100
50
0
0
50
100
C onductio n Angle
180
120
90
60
30
0.
0.
K/
W
W
K/
W
K/
16
SA
4K
/W
W
.01
= 0
25
K/
K/
W
-
Δ
0 .4
K/ W
R
0 .6
K/ W
1 K/
W
VSK.136.. Se rie s
Pe r M odule
T
J
= 12 5°C
150
200
250
300
0
25
50
75
1 00
125
Tota l R M S Outp ut C urre nt (A)
M axim um A llowab le Am bient Tem pera ture (°C)
Fig. 7 - On-State Power Loss Characteristics
1 0 00
hS
R
t
M axim um To ta l P o we r Lo ss (W )
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
0
55
11 0
165
220
20 5
7
25
2 x VSK.136.. Series
Single P hase Brid ge
C onnected
T
J
= 125°C
0.35
K/ W
0.
04
A
0.
=
K/
08
0.0
W
180
(Sine )
180
(Re ct)
0.
12
K/
W
/W
1K
K/
W
-
Δ
R
0 .2
K/
W
0. 6 K
/W
50
75
100
125
Total O utp ut C urre nt (A)
M axim um Allowab le Am bient Te m p era ture (°C )
Fig. 8 - On-State Power Loss Characteristics
15 0 0
M a xim u m To ta l Po w e r Lo ss (W )
R
t
A
hS
12 0 0
0.
08
=
0.
04
K/
W
90 0
120
(Rec t)
0.1
K/
-
W
Δ
R
K/
W
0 .1
60 0
3 x VSK.1 3 6.. Serie s
Th ree Ph a se B rid g e
C o n n ec te d
T
J
= 1 2 5°C
0
10 0
20 0
3 00
6K
/W
30 0
K/ W
0 .4 K
/W
0 . 25
1 K/ W
0
40
00
25
50
75
1 00
1 25
To ta l O u tp u t C u rre nt (A)
M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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