IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
Rev. 05 — 27 February 2009
Product data sheet
1. Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.2 Features and benefits
High reliability
High surge current capability
High thermal cycling performance
1.3 Applications
Ignition circuits
Motor control
Protection Circuits
Static switching
1.4 Quick reference data
Table 1.
V
DRM
I
T(AV)
I
T(RMS)
Quick reference
Conditions
Min
-
half sine wave;
T
mb
≤
109 °C; see
Figure 3
half sine wave;
T
mb
≤
109 °C; see
Figure 1;
see
Figure 2
V
D
= 12 V; T
j
= 25 °C;
I
T
= 100 mA; see
Figure 8
-
-
Typ
-
-
-
Max
650
7.5
12
Unit
V
A
A
repetitive peak
off-state voltage
average on-state
current
RMS on-state
current
Symbol Parameter
Static characteristics
I
GT
gate trigger current
-
2
15
mA
NXP Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
2. Pinning information
Table 2.
Pin
1
2
3
mb
K
A
G
mb
Pinning information
Symbol
Description
cathode
anode
gate
anode
mb
A
G
sym037
Simplified outline
Graphic symbol
K
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BT151-650R
TO-220AB;
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
BT151-650R_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 27 February 2009
2 of 11
NXP Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
4. Limiting values
Table 4.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
dI
T
/dt
I
GM
P
GM
T
stg
T
j
I
TSM
Limiting values
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
I2t for fusing
average gate power
peak reverse gate
voltage
half sine wave; t
p
= 8.3 ms; T
j(init)
= 25 °C
half sine wave; t
p
= 10 ms; T
j(init)
= 25 °C; see
Figure 4;
see
Figure 5
t
p
= 10 ms; sine-wave pulse
over any 20 ms period
half sine wave; T
mb
≤
109 °C; see
Figure 3
half sine wave; T
mb
≤
109 °C; see
Figure 1;
see
Figure 2
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs
Conditions
Min
-
-
-
-
-
-
-
-40
-
-
-
-
-
-
Max
650
650
7.5
12
50
2
5
150
125
132
120
72
0.5
5
Unit
V
V
A
A
A/µs
A
W
°C
°C
A
A
A
2
s
W
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
2
t
P
G(AV)
V
RGM
25
I
T(RMS)
(A)
20
001aaa954
16
I
T(RMS)
(A)
12
001aaa999
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
Fig 2.
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
RMS on-state current as a function of mounting
base temperature; maximum values
BT151-650R_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 27 February 2009
3 of 11
NXP Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
15
P
tot
(W)
1.9
2.2
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
2.8
003aab830
a = 1.57
5
α
8
I
T(AV)
(A)
Fig 3.
10
3
Total power dissipation as a function of average on-state current; maximum values
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
10
−5
10
−4
10
−3
t
p
(s)
10
−2
Fig 4.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT151-650R_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 27 February 2009
4 of 11
FPGA/CPLD
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