Si6969DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
R
DS(on)
(Ω)
0.034 at V
GS
= - 4.5 V
0.050 at V
GS
= - 2.5 V
0.075 at V
GS
= - 1.8 V
I
D
(A)
± 4.6
± 3.8
± 3.0
FEATURES
•
Halogen-free
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top
View
Ordering Information:
Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
D
2
8
D
2
7 S
2
6 S
2
5 G
2
G
1
G
2
Si6969DQ
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
- 12
±8
± 4.6
± 3.8
± 30
- 1.25
1.1
0.72
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes:
a. Surface Mounted on FR4 board.
b. t
≤
10 s.
t
≤
10 s
Steady State
Symbol
R
thJA
Typical
115
Maximum
110
Unit
°C/W
Document Number: 70828
S-81221-Rev. B, 02-Jun-08
www.vishay.com
1
Si6969DQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.25 A, dI/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
Ω
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.6 A
21
4.5
3.5
25
35
80
40
50
50
60
150
80
100
ns
40
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 9.6 V, V
GS
= 0 V
V
DS
= - 9.6 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
- 8 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 4.6 A
V
GS
= - 2.5 V, I
D
= - 3.8 A
V
GS
= - 1.8 V, I
D
= - 3.0 A
V
DS
= - 8 V, I
D
= - 4.6 A
I
S
= - 1.25 A, V
GS
= 0 V
- 30
0.027
0.037
0.053
18
- 0.68
- 1.1
0.034
0.050
0.075
S
V
Ω
- 0.45
± 100
-1
- 25
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70828
S-81221-Rev. B, 02-Jun-08
Si6969DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
0.08
0.07
T
J
= 150 °C
I
S
- So
u
rce C
u
rrent (A)
10
R
DS(on)
- On-Resistance (W)
0.06
0.05
I
D
= 4.6 A
0.04
0.03
0.02
0.01
1
0.00
0.00
0.2
0.4
0.6
0.8
1..0
1.2
1.4
0
2
4
6
8
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
T
J
= 25 °C
Source-Drain Diode Forward Voltage
0.5
0.4
0.3
0.2
0.1
0.0
- 0.1
- 0.2
- 50
5
Po
w
er (
W
)
I
D
= 250
µA
30
25
On-Resistance vs. Gate-to-Source Voltage
V
GS(th)
V
ariance (
V
)
20
15
10
- 25
0
25
50
75
100
125
150
0
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
30
Threshold Voltage
2
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
Single Pulse Power
0.2
0.1
0.1
0.05
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (s)
2. Per Unit Base = R
thJA
= 115 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?70828.
www.vishay.com
4
Document Number: 70828
S-81221-Rev. B, 02-Jun-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
