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74HC2GU04
Dual unbuffered inverter
Rev. 2 — 20 August 2014
Product data sheet
1. General description
The 74HC2GU04 is a high-speed Si-gate CMOS device.
The 74HC2GU04 provides two unbuffered inverters.
2. Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Complies with JEDEC standard no. 7A
High noise immunity
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Low power dissipation
Balanced propagation delays
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2GU04GW
74HC2GU04GV
40 C
to +125
C
40 C
to +125
C
Name
SC-88
SC-74
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT363
SOT457
Type number
4. Marking
Table 2.
Marking
Marking code
PD
HU4
Type number
74HC2GU04GW
74HC2GU04GV
NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
5. Functional diagram
1
1
1A
1Y
6
1
6
3
2A
2Y
4
3
1
4
mnb080
mnb079
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74HC2GU04
1A
GND
1
2
6
5
1Y
V
CC
2Y
2A
3
001aaf305
4
Fig 4.
Pin configuration
6.2 Pin description
Table 3.
Symbol
1A
GND
2A
2Y
V
CC
1Y
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data output
7. Functional description
Table 4.
Input
nA
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Function table
[1]
Output
nY
H
L
74HC2GU04
Product data sheet
Rev. 2 — 20 August 2014
2 of 16
NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to V
CC
+ 0.5 V
[1]
[1]
[1]
[1]
[1]
Min
0.5
-
-
-
-
-
65
[2]
Max
+7.0
20
20
25
+50
50
+150
250
Unit
V
mA
mA
mA
mA
mA
C
mW
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 and SC-74 packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t
r
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
rise time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
f
fall time
except for Schmitt trigger inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
-
-
-
-
-
-
1000
500
400
ns
ns
ns
-
-
-
-
-
-
1000
500
400
ns
ns
ns
Conditions
Min
2.0
0
0
40
Typ
5.0
-
-
+25
Max
6.0
V
CC
V
CC
+125
Unit
V
V
V
C
74HC2GU04
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 20 August 2014
3 of 16
NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
T
amb
= 25
C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
V
IH
input leakage current
supply current
input capacitance
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
V
V
V
V
V
V
I
= GND or V
CC
; V
CC
= 6.0 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
1.7
3.6
4.8
-
-
-
0
0
0
0.15
0.16
-
-
3.0
1.1
2.4
3.1
0.9
2.1
2.9
0.1
0.1
0.1
0.26
0.26
0.1
1.0
-
-
-
-
0.3
0.9
1.2
V
V
V
V
V
A
A
pF
V
V
V
V
V
V
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
V
V
V
V
V
1.7
3.6
4.8
-
-
-
1.1
2.4
3.1
0.9
2.1
2.9
-
-
-
0.3
0.9
1.2
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
T
amb
=
40 C
to +85
C
74HC2GU04
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 20 August 2014
4 of 16
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