Freescale Semiconductor
Technical Data
Document Number: MRF18060A
Rev. 9, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications. Specified for GSM 1805 -- 1880 MHz.
•
Typical GSM Performance, Full Frequency Band (1805 -- 1880 MHz)
Power Gain — 13 dB @ 60 Watts
Efficiency — 45% @ 60 Watts
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060ALR3
MRF18060ALSR3
1805-
-1880 MHz, 60 W, 26 V
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF18060ALR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF18060ALSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
≥
25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
180
1.03
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.97
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
MRF18060ALR3 MRF18060ALSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Common--Source Amplifier Power Gain @ 60 W
(2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 -- 1880 MHz)
Drain Efficiency @ 60 W
(2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 -- 1880 MHz)
Input Return Loss
(2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1805 -- 1880 MHz)
G
ps
η
IRL
dB
11.5
43
—
13
45
—
—
%
—
-- 10
dB
C
iss
C
oss
C
rss
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
—
3.9
0.27
4
4.5
—
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch--to--batch consistency.
MRF18060ALR3 MRF18060ALSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
R2
R1
T1
R3
Z6
C4
+
C3
V
SUPPLY
V
BIAS
C1
R4
C2
R5
Z1
C5
Z2
C6
Z3
DUT
Z4
Z5
C7
RF
INPUT
Z7
RF
OUTPUT
ARCHIVE INFORMATION
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
T1
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10
mF,
35 V Electrolytic Tantalum Capacitor
1.2 pF Chip Capacitor
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT--23
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″ Microstrip
1.16″ x 0.09″ Microstrip
0.57″ x 0.95″ Microstrip
0.59″ x 1.18″ Microstrip
1.26″ x 0.15″ Microstrip
1.15″ x 0.09″ Microstrip
0.37″ x 0.09″ Microstrip
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
-
VBIAS
R1
R2
T1
R3
C1
R4
C2
R5
C6
C5
C3
C4
VSUPPLY
C7
Ground
MRF18060
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
-
MRF18060ALR3 MRF18060ALSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
BIAS
C1
T1
R1
R2
R5
V
SUPPLY
C2
R3
T2
R4
C3
C4
+
C5
R6
ARCHIVE INFORMATION
Z1
C6
Z2
C7
Z3
Z4
Z6
Z5
C8
Z7
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
1
mF
Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU--P (0805)
10
mF,
35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU--P (0805)
1 pF Chip Capacitor, ACCU--P (0805)
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
T1
LP2951 Micro--8 Voltage Regulator
T2
BC847 SOT--23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon
®
Glass,
ε
r
= 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
-
MRF18060ALR3 MRF18060ALSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
RF
INPUT
RF
OUTPUT
V
BIAS
Ground
V
SUPPLY
R1
R2
R3
C1
T1
R4
C4
T2
R5
C2
C3
R6
MRF18060
C5
C7
C6
C8
ARCHIVE INFORMATION
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
-
MRF18060ALR3 MRF18060ALSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
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