Si7392ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
30
30
17.5
b, c
14.0
b, c
50
30
4.5
b, c
25
30
27.5
17.5
5
b, c
3.2
b, c
- 55 to 150
260
Unit
V
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b, f
t
10
s
Steady State
Maximum
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 73461
S11-0212-Rev. E, 14-Feb-11
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
20
3.5
Maximum
25
4.5
Unit
Si7392ADP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.7 A
0.73
26
19
13
13
T
C
= 25 °C
30
50
1.1
40
30
ns
A
V
nC
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12.5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.5 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 µA to 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 12.5 A
30
0.006
0.009
46
1465
360
150
25
12
3.7
3.1
1.9
16
50
21
8
8
35
23
8
2.9
25
75
32
15
15
55
35
15
ns
38
18
nC
pF
0.0075
0.0115
1.0
30
30
-6
2.5
± 100
1
10
nA
µA
A
S
V
mV/°C
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73461
S11-0212-Rev. E, 14-Feb-11
Si7392ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
V
GS
= 10
V
thru 4
V
40
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.2
1.0
25 °C
°C
0.8
30
0.6
T
C
= 125 °C
0.4
20
3
V
10
0.2
- 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.0
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.011
1800
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
0.010
C - Capacitance (pF)
1500
C
iss
0.009
V
GS
= 4.5
V
1200
0.008
900
0.007
V
GS
= 10
V
600
C
oss
300
C
rss
0.006
0.005
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 11 A
8
R
DS(on)
- On-Resistance
V
DS
= 10
V
6
V
DS
= 15
V
V
DS
= 20
V
1.8
I
D
= 12.5 A
1.6
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
1.4
(
N
ormalized)
V
GS
= 10
V
1.2
V
GS
= 4.5
V
4
1.0
2
0.8
0
0.0
5.2
10.4
15.6
20.8
26.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73461
S11-0212-Rev. E, 14-Feb-11
www.vishay.com
3
Si7392ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100.000
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.05
10.000
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
0.04
1.000
0.03
0.100
T
J
= 25 °C
0.02
T
J
= 125 °C
0.010
0.01
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 1
µA
0.2
160
V
GS(th)
Variance
(V)
0.0
Po
w
er (
W
)
I
D
= 5 mA
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
40
120
200
On-Resistance vs. Gate-to-Source Voltage
80
0
- 25
0
25
50
75
100
125
150
10
-3
10
-2
10
-1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
D
- Drain C
u
rrent (A)
10
1 ms
Single Pulse Power
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73461
S11-0212-Rev. E, 14-Feb-11
Si7392ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
40
I
D
- Drain C
u
rrent (A)
30
Limited
by
Package
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current De-Rating*
35
2.5
28
2.0
Po
w
er (W)
Po
w
er (W)
21
1.5
14
1.0
7
0.5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation PD is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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