IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
320
85
160
Single
D
FEATURES
600
0.12
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
Available
RoHS*
COMPLIANT
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
Super-247
G
S
D
G
S
N-Channel MOSFET
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Super-247
IRFPS38N60LPbF
SiHFPS38N60L-E3
IRFPS38N60L
SiHFPS38N60L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
600
± 30
38
24
150
4.3
680
38
54
540
19
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Repetitive Avalanche Current
a
Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T
J
= 25 °C, L = 0.91 mH, R
g
= 25
,
I
AS
= 38 A, dV/dt = 13 V/ns (see fig. 14a).
c. I
SD
38 A, dI/dt
630 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
1
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.22
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
eff.
C
oss
eff. (ER)
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 23 A
b
V
DS
= 50 V, I
D
= 23 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
GS
= 0 V
V
DS
= 0 V to 480 V
c
600
-
3.0
-
-
-
-
20
-
-
-
-
-
-
-
410
-
-
-
-
0.12
-
7990
740
72
350
260
-
-
-
1.2
44
130
92
69
-
-
5.0
± 100
50
2.0
0.15
-
-
-
-
-
-
320
85
160
-
-
-
-
-
V
mV/°C
V
nA
μA
mA
S
pF
V
GS
= 10 V
I
D
= 38 A, V
DS
= 480 V
see fig. 7 and 15
b
-
-
nC
f = 1 MHz, open drain
V
DD
= 300 V, I
D
= 38 A,
R
G
= 4.3
,
V
GS
= 10 V,
see fig. 11a and 11b
b
-
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
-
-
170
420
830
2600
9.1
38
A
150
1.5
250
630
1240
3900
14
V
ns
G
S
T
J
= 25 °C, I
S
= 38 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 38 A
T
J
= 125 °C, dI/dt = 100 A/μs
b
T
J
= 25 °C, I
F
= 38 A, V
GS
= 0 V
b
T
J
= 125 °C, dI/dt = 100 A/μs
b
T
J
= 25 °C
Body Diode Reverse Recovery Charge
Reverse Recovery Time
nC
A
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising form 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
www.vishay.com
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Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
ID, Drain-to-Source Current
(Α
)
ID, Drain-to-Source Current (A)
100
100
T J = 150°C
10
10
BOTTOM
1
1
0.1
4.5V
0.01
T J = 25°C
0.1
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
4
6
8
10
12
14
16
VDS, Drain-to-Source Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1000
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
100
BOTTOM
(Normalized)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID = 38A
2.5
VGS = 10V
2.0
10
1.5
4.5V
1.0
1
0.5
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
3
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
100000
VGS
Ciss
Crss
Coss
10000
= 0V,
f = 1 MHZ
=C +C , C
gs
gd
ds SHORTED
=C
gd
=C +C
ds gd
12.0
ID= 38A
VGS , Gate-to-Source Voltage (V)
10.0
VDS= 480V
VDS= 300V
VDS= 120V
Ciss
C, Capacitance(pF)
8.0
1000
Coss
6.0
4.0
100
Crss
2.0
10
1
10
100
1000
0.0
0
50
100
150
200
250
VDS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
50
45
40
35
Energy (µJ)
1000.00
ISD, Reverse Drain Current (A)
100.00
T J = 150°C
10.00
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
1.00
T J = 25°C
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
V
GS
R
G
V
DS
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
R
D
100
10
100µsec
1msec
Fig. 11a - Switching Time Test Circuit
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
10000
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10msec
V
DS
90 %
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
40
35
30
ID, Drain Current (A)
Fig. 11b - Switching Time Waveforms
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC )
0.1
D = 0.50
0.20
0.10
0.01
0.05
0.02
0.01
P
DM
t
1
0.001
t
2
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
J
= P
DM
x Z
thJC
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
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