NTE2592
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D
High Breakdown Voltage: V
(BR)CBO
= 2000V Min
D
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
C
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 1800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 300µA
V
CE
= 10V, I
C
= 300µA
I
C
= 600µA, I
B
= 120µA
I
C
= 600µA, I
B
= 120µA
Min
–
–
10
–
–
–
2000
1800
5
–
–
6
–
–
–
–
–
1.8
Typ
–
Max
1
1
60
–
5
2
–
–
–
–
MHz
V
V
V
V
V
pF
Unit
µA
µA
V
(BR)CBO
I
C
= 100µA, I
E
= 0
V
(BR)EBO
I
E
= 10µA, I
C
= 0
C
ob
V
CB
= 100V, f = 1MHz
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100µA, R
BE
=
∞
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