PD - 96277B
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
l
Lead-Free
Description
This HEXFET Power MOSFET
utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
®
IRF9204PbF
HEXFET
®
Power MOSFET
D
V
DSS
= -40V
R
DS(on)
= 16mΩ
I
D
= -74A
G
S
D
G
D
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
TO-220AB
IRF9204PbF
G
D
S
G a te
D r a in
S o u rce
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Max.
-74
-53
-56
-300
143
0.95
± 20
Units
A
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
270
502
See Fig.17a, 17b, 14, 15
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
y
y
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
j
i
Parameter
Typ.
Max.
1.05
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
i
–––
0.50
–––
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1
05/23/11
IRF9204PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
-40
–––
–––
–––
-1.0
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.03
–––
–––
-2.0
–––
–––
–––
–––
–––
149
27
31
27
383
139
153
4.5
7.5
7676
654
539
1747
598
797
–––
–––
16
23
-3.0
–––
-25
-250
-100
100
224
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= -250μA
V/°C Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -37A
mΩ
V
GS
= -4.5V, I
D
= -30A
V V
DS
= V
GS
, I
D
= -100μA
S V
DS
= -10V, I
D
= -37A
V
DS
= -40V, V
GS
= 0V
μA
V
DS
= -40V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
nA
V
GS
= 20V
I
D
= -37A
nC V
DS
= -32V
V
GS
= -10V
V
DD
= -20V
I
D
= -37A
ns
R
G
= 7.5
Ω
V
GS
= -10V
e
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
D
G
S
pF
ƒ = 1.0KHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0KHz
V
GS
= 0V, V
DS
= -32V, ƒ = 1.0KHz
V
GS
= 0V, V
DS
= 0V to -32V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
-74
-300
A
Conditions
MOSFET symbol
D
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= -37A, V
GS
= 0V
T
J
= 25°C, I
F
= -37A, V
DD
= -20V
Ã
–––
–––
-1.3
V
–––
51
77
ns
–––
377
566
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
e
Repetitive rating; pulse width limited by
Notes:
Limited by T
Jmax
, see Fig.17a, 17b, 14, 15 for typical repetitive
avalanche performance.
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.399mH
R
G
= 25Ω, I
AS
= -37A, V
GS
=-10V. Part not recommended for
use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB pakcage.
R
θ
is measured at T
J
approximately 90°C
2
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IRF9204PbF
1000
TOP
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
1000
TOP
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
-2.5V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
-2.5V
≤
60μs
PULSE WIDTH Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
50
40
30
20
10
0
V DS = -5V
380μs PULSE WIDTH
TJ = 25°C
100
10
T J = 175°C
T J = 175°C
1
T J = 25°C
VDS = -25V
≤60μs
PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0
20
40
60
80
100
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
1000
Fig 4.
Typical Forward Transconductance Vs. Drain Current
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1.4
ID = -37A
VGS = -10V
1.2
10
1.0
1
T J = 25°C
0.8
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 5.
Typical Source-Drain Diode Forward Voltage
Fig 6.
Normalized On-Resistance Vs. Temperature
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3
IRF9204PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= -37A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -32V
VDS= -20V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8.
Typical Gate Charge Vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
80
70
60
50
40
30
20
10
0
0
1
10
100
Limited By Package
ID, Drain-to-Source Current (A)
1msec
10msec
10
LIMITED BY PACKAGE
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
100
100μsec
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Maximum Drain Current Vs. Case Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRF9204PbF
1200
EAS , Single Pulse Avalanche Energy (mJ)
3.0
VGS(th) , Gate threshold Voltage (V)
1000
800
600
400
200
0
25
50
75
100
ID
TOP
-9.66A
-16.7A
BOTTOM -37A
2.5
2.0
ID = 1.0A
ID = 1.0mA
1.5
ID = 250uA
ID = 150uA
ID = 100uA
1.0
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 12.
Maximum Avalanche Energy Vs. Drain Current
1000
Duty Cycle = Single Pulse
Fig 13.
Threshold Voltage Vs. Temperature
Avalanche Current (A)
100
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
EAR , Avalanche Energy (mJ)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = -37A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy Vs. Temperature
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