Si4866DY
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
12
R
DS(on)
(Ω)
0.0055 at V
GS
= 4.5 V
0.008 at V
GS
= 2.5 V
I
D
(A)
17
14
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• PWM Optimized for High Efficiency
• Low Output Voltage
• 100 % R
g
Tested
APPLICATIONS
• Synchronous Rectifier
• Point-of-Load Synchronous Buck Converter
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information:
Si4866DY-T1-E3 (Lead Pb)-free)
Si4866DY-T1-GE3 (Lead Pb)-free and Halogen-free)
8
7
6
5
D
D
D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
2.7
3.0
2.0
- 55 to 150
17
14
± 50
1.40
1.6
1.0
W
°C
10 s
12
±8
11
8
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
34
67
15
Maximum
41
80
19
°C/W
Unit
Document Number: 71699
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
1
Si4866DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, dI/dt = 100 A/µs
V
DD
= 6 V, R
L
= 6
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
1.5
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 17 A
21
4.6
3.5
2.3
28
32
82
35
60
3.9
42
48
123
53
90
ns
Ω
30
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 9.6 V, V
GS
= 0 V
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 17
V
GS
= 2.5 V, I
D
= 14
V
DS
= 6 V, I
D
= 17
I
S
= 2.7 A, V
GS
= 0 V
40
0.0045
0.0065
80
0.70
1.1
0.0055
0.008
0.6
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 V thru 2.5 V
40
I
D
- Drain Current (A)
40
50
2V
30
I
D
- Drain Current (A)
30
20
20
T
C
= 125 °C
10
25 °C
10
1.5 V
0
0
1
2
3
4
5
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71699
S09-0228-Rev. D, 09-Feb-09
Si4866DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.015
4000
R
DS(on)
- On-Resistance (Ω)
0.012
C - Capacitance (pF)
3200
C
iss
0.009
V
GS
= 2.5 V
0.006
V
GS
= 4.5 V
2400
1600
C
oss
0.003
800
C
rss
0.000
0
10
20
30
40
50
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
DS
= 6 V
I
D
= 17 A
R
DS(on)
- On-Resistance
1.6
V
GS
= 4.5 V
I
D
= 17 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
5
1.4
4
(Normalized)
1.2
3
1.0
2
0.8
1
0.6
- 50
0
0
5
10
15
20
25
30
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
50
0.040
On-Resistance vs. Junction Temperature
T
J
= 150 °C
10
R
DS(on)
- On-Resistance (Ω)
0.032
I
S
- Source Current (A)
0.024
0.016
I
D
= 17 A
0.008
T
J
= 25 °C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71699
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
3
Si4866DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
I
D
= 250 µA
0.2
V
GS(th)
Variance (V)
160
200
Power (W)
0.0
120
- 0.2
80
- 0.4
40
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67 °C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71699.
www.vishay.com
4
Document Number: 71699
S09-0228-Rev. D, 09-Feb-09
Package Information
Vishay Siliconix
SOIC
(NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
7
6
5
E
1
2
3
4
H
S
D
0.25 mm (Gage Plane)
A
h x 45
C
All Leads
q
L
0.101 mm
0.004"
e
B
A
1
MILLIMETERS
DIM
A
A
1
B
C
D
E
e
H
h
L
q
S
5.80
0.25
0.50
0°
0.44
Min
1.35
0.10
0.35
0.19
4.80
3.80
1.27 BSC
6.20
0.50
0.93
8°
0.64
0.228
0.010
0.020
0°
0.018
Max
1.75
0.20
0.51
0.25
5.00
4.00
Min
0.053
0.004
0.014
0.0075
0.189
0.150
INCHES
Max
0.069
0.008
0.020
0.010
0.196
0.157
0.050 BSC
0.244
0.020
0.037
8°
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
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